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1/f Noise in Synaptic Ferroelectric Tunnel Junction: Impact on Convolutional Neural Network

• Authors : Wonjun Shin; Kyung Kyu Min; Jong-Ho Bae

Subjects: 1/f noise; ferroelectric tunnel junction; low-frequency noise

• Source: Advanced Intelligent Systems, Vol 5, Iss 6, Pp n/a-n/a (2023)

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Toward Optimized In‐Memory Reinforcement Learning: Leveraging 1/f Noise of Synaptic Ferroelectric Field‐Effect‐Transistors for Efficient Exploration

• Authors : Jangsaeng Kim; Wonjun Shin; Jiyong Yim

Subjects: computing‐in‐memory; exploration; ferroelectric field‐effect‐transistors

• Source: Advanced Intelligent Systems, Vol 6, Iss 6, Pp n/a-n/a (2024)

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1/f NOISE IN LARGE SIGNAL OPERATION OF PASSIVE COMPONENTS

• Authors : MARTINI, GIUSEPPE; Martini, Giuseppe

Subjects: cyclostationary noise; 1/f noise; low-frequency noise

• Source: Fluctuation and Noise Letters. :L475-L489

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Analysis of Low-Frequency 1/f Noise Characteristics for MoTe2 Ambipolar Field-Effect Transistors

• Authors : Bing Zhang; Congzhen Hu; Youze Xin

Subjects: MoTe2; low-frequency noise; carrier number fluctuations

• Source: Nanomaterials, Vol 12, Iss 8, p 1325 (2022)

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Measurement, analysis, and modeling of 1/f noise in pentacene thin film transistors

• Authors : Kang, Hongki; Jagannathan, Lakshmi; Subramanian, Vivek ...

Subjects: LOW-FREQUENCY NOISE; FIELD-EFFECT TRANSISTORS; FLICKER NOISE

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Study of electromigration mechanisms in 22nm half-pitch Cu interconnects by 1/f noise measurements

• Authors : Beyne, Sofie; Croes, Kristof; Van der Veen, Marleen H.

Subjects: 1/f noise; copper; electromigration

• Source: ISBN:9781509064731 ; ISSN:2380-6338 ; 2017 IEEE International Interconnect Technology Conference (IITC), (1-3) ; 2017 IEEE International Interconnect Technology Conference (IITC), Hsinchu, Taiwan,

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Toward Ideal Low‐Frequency Noise in Monolayer CVD MoS2 FETs: Influence of van der Waals Junctions and Sulfur Vacancy Management.

• Authors : Shin, Wonjun^1,2 (AUTHOR) ; Byeon, Junsung³ (AUTHOR); Koo, Ryun‐Han¹ (AUTHOR)

• Source: Advanced Science. 7/24/2024, Vol. 11 Issue 28, p1-12. 12p.

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Physical correlation between stochasticity and process-induced damage in ferroelectric memory devices

• Authors : Koo, Ryun-Han; Kim, Seungwhan; Im, Jiseong ...

Subjects: LOW-FREQUENCY NOISE; CARRIER TRANSPORT; 1/F NOISE

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Gate electrode effects on low-frequency (1/f) noise in p-MOSFETs with high-κ dielectrics

• Authors : Srinivasan, P.; Simoen, E.; Singanamalla, R.

Subjects: FUSI; Hafnium silicates; High-κ dielectric

• Source: Faculty Publications

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1/f noise performance of MOSFETs with HfO2 and metal gate on Ge-on-insulator substrates

• Authors : Srinivasan, P.; Simoen, E.; De Jaeger, B.

Subjects: Germanium; HfO2; Interface traps

• Source: Faculty Publications

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