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Academic Journal

Electron microscopy investigations of V defects in multiple InGaN/GaN quantum wells and InGaN quantum dots.

  • Authors : Yang JR; Institute of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan, Republic of China.; Li WC

  • Source: Journal of microscopy [J Microsc] 2010 Mar; Vol. 237 (3), pp. 275-81.Publisher: Published for the Royal Microscopical Society by Blackwell Scientific Publications Country of Publication: England NLM ID:

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