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Academic Journal

Update Disturbance-Resilient Analog ReRAM Crossbar Arrays for In-Memory Deep Learning Accelerators.

  • Authors : Choi W; IBM Research Europe-Zurich, Rüschlikon, 8803, Switzerland.; Stecconi T

  • Source: Advanced science (Weinheim, Baden-Wurttemberg, Germany) [Adv Sci (Weinh)] 2026 Jan; Vol. 13 (4), pp. e04578. Date of Electronic Publication: 2025 Sep 16.Publisher: WILEY-VCH Country of Publication: Germany NLM ID: 101664569 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 2198-3844

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Academic Journal

A keyword-based approach to analyzing scientific research trends: ReRAM present and future.

  • Authors : Kim H; Department of Materials Science and Engineering (MSE), Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea.; Kim SH

  • Source: Scientific reports [Sci Rep] 2025 Apr 08; Vol. 15 (1), pp. 12011. Date of Electronic Publication: 2025 Apr 08.Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN:

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Academic Journal

Improving Reliability of 1 Selector-1 ReRAM Crossbar Arrays Through Hybrid Switching Methods.

  • Authors : Seo HK; Department of Artificial Intelligence Convergence, Sahmyook University, Seoul 01795, Republic of Korea.; Yang MK

  • Source: Materials (Basel, Switzerland) [Materials (Basel)] 2025 Feb 09; Vol. 18 (4). Date of Electronic Publication: 2025 Feb 09.Publisher: MDPI Country of Publication: Switzerland NLM ID: 101555929 Publication Model: Electronic Cited Medium: Print ISSN: 1996-1944 (Print)

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Author Correction: An analytical approach to engineer multistability in the oscillatory response of a pulse-driven ReRAM.

  • Authors : Ascoli A; Technische Universität Dresden, Faculty of Electrical and Computer Engineering, 01069, Dresden, Germany. .; Technische Universität Dresden, Institute of Circuits and Systems, Faculty of Electrical and Computer Engineering, 01069, Dresden, Germany. .

  • Source: Scientific reports [Sci Rep] 2024 Sep 03; Vol. 14 (1), pp. 20488. Date of Electronic Publication: 2024 Sep 03.Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN:

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Academic Journal

An analytical approach to engineer multistability in the oscillatory response of a pulse-driven ReRAM.

  • Authors : Ascoli A; Politecnico di Torino, Department of Electronics and Telecommunications, Turin, 10129, Italy. .; Technische Universität Dresden, Institute of Circuits and Systems, Faculty of Electrical and Computer Engineering, Dresden, 01069, Germany. .

  • Source: Scientific reports [Sci Rep] 2024 Mar 07; Vol. 14 (1), pp. 5626. Date of Electronic Publication: 2024 Mar 07.Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN:

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Academic Journal

Impact of Line Edge Roughness on ReRAM Uniformity and Scaling.

  • Authors : Constantoudis V; Institute of Nanoscience and Nanotechnology, NCSR Demokritos, 15341 Aghia Paraskevi, Greece.; Nanometrisis P.C., 15341 Aghia Paraskevi, Greece.

  • Source: Materials (Basel, Switzerland) [Materials (Basel)] 2019 Nov 30; Vol. 12 (23). Date of Electronic Publication: 2019 Nov 30.Publisher: MDPI Country of Publication: Switzerland NLM ID: 101555929 Publication Model: Electronic Cited Medium: Print ISSN: 1996-1944 (Print)

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Academic Journal

Sustainable resistance switching performance from composite-type ReRAM device based on carbon Nanotube@Titania core-shell wires.

  • Authors : Kim Y; The Research Institute of Industrial Science, Hanyang University, Seoul, 04763, Republic of Korea.; Department of Electronic and Computer Engineering, Hanyang University, Seoul, 04763, Republic of Korea.

  • Source: Scientific reports [Sci Rep] 2020 Nov 02; Vol. 10 (1), pp. 18830. Date of Electronic Publication: 2020 Nov 02.Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN:

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Academic Journal

Reversible switching mode change in Ta2O5-based resistive switching memory (ReRAM).

  • Authors : Kim T; Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, South Korea.; Son H

  • Source: Scientific reports [Sci Rep] 2020 Jul 09; Vol. 10 (1), pp. 11247. Date of Electronic Publication: 2020 Jul 09.Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN:

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Academic Journal

Investigation of switching mechanism in HfOx-ReRAM under low power and conventional operation modes.

  • Authors : Feng W; Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8560, Japan.; Shima H

  • Source: Scientific reports [Sci Rep] 2016 Dec 21; Vol. 6, pp. 39510. Date of Electronic Publication: 2016 Dec 21.Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN:

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Academic Journal

Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM.

  • Authors : Song SJ; Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 151-744, Korea.; Seok JY

  • Source: Scientific reports [Sci Rep] 2013 Dec 06; Vol. 3, pp. 3443. Date of Electronic Publication: 2013 Dec 06.Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN:

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