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Academic Journal

Poisson-Schrödinger simulation and analytical modeling of inversion charge in FDSOI MOSFET down to 0 K – Towards compact modeling for cryo CMOS application

Subjects: FDSOI; Cryo-CMOS; Poisson-Schrödinger

  • Source: ISSN: 0038-1101 ; Solid-State Electronics ; https://cea.hal.science/cea-04952484 ; Solid-State Electronics, 2021, 186, pp.108126. ⟨10.1016/j.sse.2021.108126⟩.

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Academic Journal

InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

Subjects: Organometallic vapor phase epitaxy; Semiconducting III–V materials; High electron mobility transistors

  • Source: ISSN: 0022-0248 ; Journal of Crystal Growth ; https://hal.science/hal-02055424 ; Journal of Crystal Growth, 2019, 510, pp.18-22. ⟨10.1016/j.jcrysgro.2018.12.014⟩.

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