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Scanning tunneling microscopy with InAs nanowire tips

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  • معلومة اضافية
    • بيانات النشر:
      American Institute of Physics
    • الموضوع:
      2012
    • Collection:
      Forschungszentrum Jülich: JuSER (Juelich Shared Electronic Resources)
    • الموضوع:
      DE
    • نبذة مختصرة :
      Indium arsenide nanowires grown by selective-area vapor phase epitaxy are used as tips for scanning tunneling microscopy (STM). The STM tips are realized by positioning the wires manually on the corner of a double cleaved gallium arsenide wafer with sub-μm precision and contacting them lithographically, which is fully compatible with further integrated circuitry on the GaAs wafer. STM images show a z noise of 2 pm and a lateral stability of, at least, 0.5 nm on a Au(111) surface. I(z) spectroscopy reveals an exponential decay indicating tunneling through vacuum. Subsequent electron microscopy images of the tip demonstrate that the wires are barely modified during the STM imaging.
    • Relation:
      info:eu-repo/semantics/altIdentifier/issn/1077-3118; info:eu-repo/semantics/altIdentifier/wos/WOS:000312490000073; info:eu-repo/semantics/altIdentifier/hdl/2128/17350; info:eu-repo/semantics/altIdentifier/issn/0003-6951; https://juser.fz-juelich.de/record/136523; https://juser.fz-juelich.de/search?p=id:%22FZJ-2013-03319%22
    • الدخول الالكتروني :
      https://juser.fz-juelich.de/record/136523
      https://juser.fz-juelich.de/search?p=id:%22FZJ-2013-03319%22
    • Rights:
      info:eu-repo/semantics/openAccess
    • الرقم المعرف:
      edsbas.BD80C89F