Influence of temperature on measurements of the two photon absorption – transient current technique in silicon planar detectors using a 1550 nm femtosecond fibre laser

The effect of temperature on the excess charge carrier generation and collection, injected using two photon absorption at a wavelength of 1550 nm, is investigated in a 285 Ωm thick, p-type silicon planar detector, with a bulk resistivity of 3.7 kΩ cm. Charge collection measurements are performed for temperatures between −20 °C to 20 °C. The collected charge decreases by about 8% when the temperature is lowered from 20 °C to −20 °C, which is linked to a decreasing excess charge carrier generation. Further, a decreasing time over threshold is observed for decreasing temperatures, which is associated to an increasing charge carrier mobility. ; This project was performed within the framework of RD50 and has received funding from the European Union’s Horizon 2020 Research and Innovation programme under GA no 101004761 (AIDAinnova), the Wolfgang Gentner Program of the German Federal Ministry of Education and Research (grant no. 05E18CHA), and the CERN, Switzerland Knowledge Transfer Fund, through a grant awarded in 2017. ; Peer reviewed