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Silicon-rich SiO2/SiO2 multilayers: A promising material for the third generation of solar cell
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- معلومة اضافية
- Contributors:
Centre de recherche sur les Ions, les MAtériaux et la Photonique CIMAP - UMR 6252; Laboratoire des technologies de la microélectronique LTM; Institut des Matériaux, de Microélectronique et des Nanosciences de Provence IM2NP; Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 IEMN
- بيانات النشر:
American Institute of Physics
- الموضوع:
2009
- Collection:
LillOA (Lille Open Archive - Université de Lille)
- نبذة مختصرة :
Si-rich-SiO 2 SRSO / SiO 2 multilayers MLs have been grown by reactive magnetron sputtering. The presence of silicon nanoclusters Si-ncls within the SRSO sublayer and annealing temperature influence optical absorption as well as photoluminescence. The optimized annealing temperature has been found to be 1100 ° C, which allows the recovery of defects and thus enhances photoluminescence. Four MLs with Si-ncl size ranging from 1.5 to 8 nm have been annealed using the optimized conditions and then studied by transmission measurements. Optical absorption has been modeled so that a size effect in the linear absorption coefficient in cm −1 has been evidenced and correlated with TEM observations. It is demonstrated that amorphous Si-ncl absorption is fourfold higher than that of crystalline Si-ncls.
- File Description:
application/octet-stream
- Relation:
http://hdl.handle.net/20.500.12210/45778
- الدخول الالكتروني :
https://hdl.handle.net/20.500.12210/45778
- Rights:
info:eu-repo/semantics/openAccess
- الرقم المعرف:
edsbas.316F0D42
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