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Silicon-rich SiO2/SiO2 multilayers: A promising material for the third generation of solar cell

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  • معلومة اضافية
    • Contributors:
      Centre de recherche sur les Ions, les MAtériaux et la Photonique CIMAP - UMR 6252; Laboratoire des technologies de la microélectronique LTM; Institut des Matériaux, de Microélectronique et des Nanosciences de Provence IM2NP; Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 IEMN
    • بيانات النشر:
      American Institute of Physics
    • الموضوع:
      2009
    • Collection:
      LillOA (Lille Open Archive - Université de Lille)
    • نبذة مختصرة :
      Si-rich-SiO 2 SRSO / SiO 2 multilayers MLs have been grown by reactive magnetron sputtering. The presence of silicon nanoclusters Si-ncls within the SRSO sublayer and annealing temperature influence optical absorption as well as photoluminescence. The optimized annealing temperature has been found to be 1100 ° C, which allows the recovery of defects and thus enhances photoluminescence. Four MLs with Si-ncl size ranging from 1.5 to 8 nm have been annealed using the optimized conditions and then studied by transmission measurements. Optical absorption has been modeled so that a size effect in the linear absorption coefficient in cm −1 has been evidenced and correlated with TEM observations. It is demonstrated that amorphous Si-ncl absorption is fourfold higher than that of crystalline Si-ncls.
    • File Description:
      application/octet-stream
    • Relation:
      http://hdl.handle.net/20.500.12210/45778
    • الدخول الالكتروني :
      https://hdl.handle.net/20.500.12210/45778
    • Rights:
      info:eu-repo/semantics/openAccess
    • الرقم المعرف:
      edsbas.316F0D42