Material Selection and Performance Optimization of Deep Ultraviolet Photodetectors- A Comparative Study of Silicon-Based and Wide-Bandgap Semiconductors

With the development of science and technology and the demand of advanced technology, deep ultraviolet photodetector has gradually become an important research direction in the field of optoelectronics. Deep ultraviolet photodetectors are widely used in the fields of environmental monitoring, biomedical imaging, military reconnaissance, and outer space environment detection. However, the current deep ultraviolet detection technology faces the challenge of low response speed, sensitivity, accuracy, and monitoring stability in complex environments. By comparing the photoelectric properties of silicon-based materials and wideband gap semiconductor materials, the effects of different materials on the performance of deep ultraviolet photodetectors are analyzed. It is pointed out that one of the keyways to optimize the performance of deep ultraviolet photodetectors is the selection of materials. Studies have shown that although silicon-based materials have the advantages of low cost and high integration, wide-band gap semiconductor materials such as gallium nitride perform better in terms of sensitivity, visible blind zone characteristics and environmental stability. This paper provides a valuable reference for the design of deep ultraviolet detectors in the future and points out the tradeoff and optimization direction of material selection.