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Solid Surfaces, Interfaces and Thin Films / by Hans L th.

Subjects: Physics.; Solid state physics.; Surfaces (Physics).

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Special Issue: Polymer surfaces, interfaces and thin films

• Authors : 차국헌; Tanaka, Keiji; Serizawa, Takeshi ...

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Special Issue: Polymer surfaces, interfaces and thin films

• Authors : Tanaka, Keiji; Serizawa, Takeshi; Chen, Wen-Chang

Subjects: Materials Chemistry; Polymers and Plastics

• Source: Polymer Journal ; volume 48, issue 4, page 323-323 ; ISSN 0032-3896 1349-0540

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Auger Electron Spectroscopy : Practical Application to Materials Analysis and Characterization of Surfaces, Interfaces, and Thin Films

• Authors : Wolstenholme, John

Subjects: Auger electron spectroscopyTECHNOLOGY & ENGINEERING / Materials Science / General

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Topological semimetals with helicoid surface states

• Authors : Fu, Liang [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Physics]

• Source: Nature Physics; 12; 10

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Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer

• Authors : Dani, Keshav [Okinawa Institute of Science and Technology Graduate Univ., Okinawa (Japan)]

• Source: Scientific Reports; 6

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A primer on selecting grain boundary sets for comparison of interfacial fracture properties in molecular dynamics simulations

• Authors : Spearot, Douglas [Univ. of Florida, Gainesville, FL (United States)]

• Source: Scientific Reports; 7; 1

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Boundary migration in a 3D deformed microstructure inside an opaque sample

• Authors : Juul Jensen, D. [Technical Univ. of Denmark, Roskilde (Denmark)]

• Source: Scientific Reports; 7; 1

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Gate-tunable electron interaction in high-κ dielectric films

• Authors : Vinokur, Valerii [Argonne National Lab. (ANL), Lemont, IL (United States); Univ. of Chicago, Chicago, IL (United States)]

• Source: Scientific Reports; 7

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Ubiquitous strong electron–phonon coupling at the interface of FeSe/SrTiO3

• Authors : Shen, Zhixun [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States)]

• Source: Nature Communications; 8

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