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SEMICONDUCTOR STRUCTURE OF SCHOTTKY DEVICES

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Optimisation of Negative Fixed Charge Based Edge Termination for Vertical GaN Schottky Devices

• Authors : Vishwajeet Maurya; Daniel Alquier; Mohammed El Amrani

Subjects: gallium nitride; vertical Schottky-diodes; edge termination

• Source: Micromachines, Vol 15, Iss 6, p 719 (2024)

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Ultra-thin Ag/Si heterojunction hot-carrier photovoltaic conversion Schottky devices for harvesting solar energy at wavelength above 1.1 µm

• Authors : Zih-Chun Su; Chung-Han Chang; Jia-Ci Jhou

Subjects: Medicine; Science

• Source: Scientific Reports, Vol 13, Iss 1, Pp 1-13 (2023)

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Ultra-thin Ag/Si heterojunction hot-carrier photovoltaic conversion Schottky devices for harvesting solar energy at wavelength above 1.1 µm.

• Authors : Su, Zih-Chun¹ (AUTHOR); Chang, Chung-Han¹ (AUTHOR); Jhou, Jia-Ci¹ (AUTHOR)

• Source: Scientific Reports. 4/3/2023, Vol. 13 Issue 1, p1-13. 13p.

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Optimisation of Negative Fixed Charge Based Edge Termination for Vertical GaN Schottky Devices

• Authors : Maurya, Vishwajeet; Alquier, Daniel; El Amrani, Mohammed ...

Subjects: gallium nitride; vertical Schottky-diodes; edge termination

• Source: ISSN: 2072-666X ; Micromachines ; https://hal.science/hal-04612568 ; Micromachines, 2024, 15 (6), pp.719. ⟨10.3390/mi15060719⟩.

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Synthesis of InP nanoneedles and their use as Schottky devices

• Authors : Strupeit, Tim; Klinke, Christian; Kornowski, Andreas

Subjects: Condensed Matter - Materials Science

• Source: ACS Nano 3 (2009) 668

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Synergistic enhancement in the microelectronic properties of poly-(dioctylfluorene) based Schottky devices by CdSe quantum dots.

• Authors : Muhammad, Fida^1,2; Tahir, Muhammad^1,3 ; Zeb, Muhammad¹

• Source: Scientific Reports. 3/16/2020, Vol. 10 Issue 1, p1-13. 13p.

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Improved electrical conductivity of Co(ii) and Cu(ii) ladder polymers in the fabrication of photoresponsive Schottky devices

• Authors : Dutta, Basudeb; Das, Dhananjoy; Raksha, Kumari ...

• Source: Materials Advances ; volume 4, issue 1, page 215-222 ; ISSN 2633-5409

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Synergistic enhancement in the microelectronic properties of poly-(dioctylfluorene) based Schottky devices by CdSe quantum dots

• Authors : Mahidur R. Sarker; Muhammad Zeb; Sawal Hamid Md Ali

Subjects: Materials science; Photoluminescence; Polymers

• Source: Scientific Reports, Vol 10, Iss 1, Pp 1-13 (2020)Scientific Reports

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Influence of background concentration induced field on the emission rate signatures of an electron trap in zinc oxide Schottky devices

• Authors : Noor, Hadia; Klason, P; Faraz, Sadia Muniza

Subjects: TECHNOLOGY; TEKNIKVETENSKAP

• Source: JOURNAL OF APPLIED PHYSICS. 107(10)

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