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Solving Max‐Cut Problem Using Spiking Boltzmann Machine Based on Neuromorphic Hardware with Phase Change Memory.

• Authors : Kang, Yu Gyeong¹ (AUTHOR); Ishii, Masatoshi² (AUTHOR); Park, Jaeweon¹ (AUTHOR)

• Source: Advanced Science. 12/11/2024, Vol. 11 Issue 46, p1-13. 13p.

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In situ characterization of vacancy ordering in Ge-Sb-Te phase-change memory alloys.

• Authors : Ting-Ting Jiang¹; Xu-Dong Wang¹; Jiang-Jing Wang^1,2

• Source: Fundamental Research. Sep2024, Vol. 4 Issue 5, p1235-1242. 8p.

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Modeling Filamentary Conduction in Reset Phase Change Memory Devices

• Authors : Hafiz, Md Samzid Bin; Silva, Helena; Gokirmak, Ali

Subjects: Physics - Applied Physics

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Bitwise Logic Using Phase Change Memory Devices Based on the Pinatubo Architecture

• Authors : Aflalo, Noa; Yalon, Eilam; Kvatinsky, Shahar

Subjects: Computer Science - Hardware Architecture

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Multi-Physics Modeling Of Phase Change Memory Operations in Ge-rich Ge$_2$Sb$_2$Te$_5$ Alloys

• Authors : Miquel, Robin; Cabout, Thomas; Cueto, Olga

Subjects: Condensed Matter - Materials Science

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Suppressing Structural Relaxation in Nanoscale Antimony to Enable Ultralow‐Drift Phase‐Change Memory Applications.

• Authors : Chen, Bin¹ (AUTHOR); Wang, Xue‐Peng^1,2 (AUTHOR); Jiao, Fangying¹ (AUTHOR)

• Source: Advanced Science. 9/5/2023, Vol. 10 Issue 25, p1-9. 9p.

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Learning-to-learn enables rapid learning with phase-change memory-based in-memory computing

• Authors : Ortner, Thomas; Petschenig, Horst; Vasilopoulos, Athanasios

Subjects: Computer Science - Neural and Evolutionary Computing; Computer Science - Machine Learning

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GeTe/Sb2Te3 Super‐Lattices: Impact of Atomic Structure on the RESET Current of Phase‐Change Memory Devices

• Authors : Damien Térébénec; Françoise Hippert; Nicolas Bernier

Subjects: atomic structure; devices; phase‐change memory

• Source: Advanced Electronic Materials, Vol 11, Iss 2, Pp n/a-n/a (2025)

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Nanoarchitectonics of binary semiconductor Sb–Y for the application of phase-change memory device.

• Authors : Xu, Shengqing¹ (AUTHOR); Wu, Weihua^1,2,3 (AUTHOR) ; Zhou, Xiaochen¹ (AUTHOR)

• Source: Applied Physics A: Materials Science & Processing. Nov2023, Vol. 129 Issue 11, p1-7. 7p.

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Electronic transport in amorphous Ge2Sb2Te5 phase-change memory line cells and its response to photoexcitation

• Authors : Talukder, A.; Kashem, M.; Hafiz, M.

Subjects: Physics - Applied Physics

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