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  • 1-10 of  10 نتائج ل ""López-Galán, Oscar A.""

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Academic Journal

One-step sputtering of MoSSe metastable phase as thin film and predicted thermodynamic stability by computational methods

Subjects: 2022-028-031353; FIB; ToF-SIMS

  • Source: Scientific Reports, 14 (1), Art-Nr.: 7104 ; ISSN: 2045-2322

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Academic Journal

Determining the Electronic Structure and Thermoelectric Properties of MoS₂/MoSe₂ Type‐I Heterojunction by DFT and the Landauer Approach

Subjects: ddc:600; Technology; info:eu-repo/classification/ddc/600

  • Source: Advanced Materials Interfaces, 10 (11), Art.-Nr.: 2202339 ; ISSN: 2196-7350

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Academic Journal

Determining the Electronic Structure and Thermoelectric Properties of MoS 2 /MoSe 2 Type‐I Heterojunction by DFT and the Landauer Approach (Adv. Mater. Interfaces 11/2023)

Subjects: Mechanical Engineering; Mechanics of Materials

  • Source: Advanced Materials Interfaces ; volume 10, issue 11 ; ISSN 2196-7350 2196-7350

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Academic Journal

Correction to: The electronic states of ITO–MoS$_{2}$: Experiment and theory

Subjects: KNMFi; 2018-020-022609; APT

  • Source: MRS communications, 12 (2), 283 - 283 ; ISSN: 2159-6859, 2159-6867

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Academic Journal

Semimetal transition in curved MoS$_2$/MoSe$_2$ Van der Waals heterojunction by dispersion-corrected density functional theory

Subjects: Heterostructure; Semiconducting; Mo

  • Source: MRS Communications, 12, 1154–1159 ; ISSN: 2159-6859, 2159-6867

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Academic Journal

On the Electronic Structure of 2H-MoS(2): Correlating DFT Calculations and In-Situ Mechanical Bending on TEM

Subjects: Article

  • Source: Materials (Basel)

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Academic Journal

Electronic states and metallic character of carbide Co/MoS 2 catalytic interface

Subjects: Electronic States; Carbide; MoS2

  • Source: ISSN: 2516-1075 ; Electronic Structure ; https://hal.science/hal-03441563 ; Electronic Structure, 2021, 3 (2), pp.025002. ⟨10.1088/2516-1075/abf62c⟩.

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Academic Journal

The electronic states of ITO–MoS₂: Experiment and theory

Subjects: KNMFi; proposalID; 2018-021-023910

  • Source: MRS communications, 12, 137–144 ; ISSN: 2159-6859, 2159-6867

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Academic Journal

Determining the Electronic Structure and Thermoelectric Properties of MoS2/MoSe2 Type‐I Heterojunction by DFT and the Landauer Approach.

Subjects: HETEROJUNCTIONS; BAND gaps; SEEBECK coefficient

  • Source: Advanced Materials Interfaces; 4/14/2023, Vol. 10 Issue 11, p1-8, 8p

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Academic Journal

On the Electronic Structure of 2H-MoS 2 : Correlating DFT Calculations and In-Situ Mechanical Bending on TEM.

Subjects: ELECTRONIC structure; FERMI energy; FERMI level

  • Source: Materials (1996-1944); Oct2022, Vol. 15 Issue 19, p6732, 10p

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  • 1-10 of  10 نتائج ل ""López-Galán, Oscar A.""