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A flexible CubeSat education platform combining software development and hardware engineering

• Authors : Schloms, Daniel; Freismuth, David; Riepler, Jakob

Subjects: Àrees temàtiques de la UPC::Aeronàutica i espai; Àrees temàtiques de la UPC::Ensenyament i aprenentatge; Artificial satellites

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SpaceTeamSat1 Preliminary Design Document: System Architecture

• Authors : Böckle, Raphael; Wagner, David; Riepler, Jakob

Subjects: TUST; STS1; PDD

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Reconfigurable Complementary and Combinational Logic Based on Monolithic and Single‐Crystalline Al‐Si Heterostructures

• Authors : Böckle, Raphael; Sistani, Masiar; Bažíková, Martina ...

Subjects: [SPI.TRON]Engineering Sciences [physics]/Electronics

• Source: EISSN: 2199-160X ; Advanced Electronic Materials ; https://hal.science/hal-03972499 ; Advanced Electronic Materials, 2022, 9 (1), pp.2200567. ⟨10.1002/aelm.202200567⟩

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Composition Dependent Electrical Transport in Si 1−x Ge x Nanosheets with Monolithic Single‐Elementary Al Contacts

• Authors : Wind, Lukas; Sistani, Masiar; Böckle, Raphael ...

• Source: Small ; volume 18, issue 44 ; ISSN 1613-6810 1613-6829

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Monolithic and Single-Crystalline Aluminum–Silicon Heterostructures

• Authors : Wind, Lukas; Böckle, Raphael; Sistani, Masiar ...

• Source: ACS Applied Materials & Interfaces ; volume 14, issue 22, page 26238-26244 ; ISSN 1944-8244 1944-8252

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Gate‐Tunable Negative Differential Resistance in Next‐Generation Ge Nanodevices and their Performance Metrics

• Authors : Böckle, Raphael; Sistani, Masiar; Eysin, Kilian ...

Subjects: germanium; nanowires; heterostructures

• Source: EISSN: 2199-160X ; Advanced Electronic Materials ; https://hal.science/hal-03429125 ; Advanced Electronic Materials, 2021, 7 (3), pp.2001178. ⟨10.1002/aelm.202001178⟩

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Nanometer-Scale Ge-Based Adaptable Transistors Providing Programmable Negative Differential Resistance Enabling Multivalued Logic

• Authors : Sistani, Masiar; Böckle, Raphael; Falkensteiner, David ...

Subjects: [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

• Source: ISSN: 1936-0851 ; ACS Nano ; https://hal.science/hal-03863044 ; ACS Nano, 2021, 15 (11), pp.18135-18141. ⟨10.1021/acsnano.1c06801⟩.

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Polycrystalline Ge Nanosheets Embedded in Metal‐Semiconductor Heterostructures Enabling Wafer‐Scale 3D Integration of Ge Nanodevices with Self‐Aligned Al Contacts

• Authors : Sistani, Masiar; Böckle, Raphael; Wind, Lukas ...

• Source: Advanced Electronic Materials ; volume 7, issue 5 ; ISSN 2199-160X 2199-160X

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Bias-Switchable Photoconductance in a Nanoscale Ge Photodetector Operated in the Negative Differential Resistance Regime

• Authors : Sistani, Masiar; Böckle, Raphael; Bartmann, Maximilian G.

• Source: ACS Photonics ; volume 8, issue 12, page 3469-3475 ; ISSN 2330-4022 2330-4022

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Ge-based reconfigurable transistors: a platform enabling negative differential resistance ; Ge-basierte rekonfigurierbare Transistoren: Eine Plattform zur Realisierung von Bauelementen mit negativen differentiellem Widerstand

• Authors : Böckle, Raphael;

Subjects: Nanostructures; Semiconductor Technology; Multi-Gate FET

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