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Engineering 2D material exciton lineshape with graphene/h-BN encapsulation

• Authors : Woo, Steffi Y.; Shao, Fuhui; Arora, Ashish

Subjects: Condensed Matter - Mesoscale and Nanoscale Physics

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Breathing modes in few-layer MoTe$_2$ activated by h-BN encapsulation

• Authors : Grzeszczyk, M.; Molas, M. R.; Bartoš, M.

Subjects: Condensed Matter - Mesoscale and Nanoscale Physics

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Effects of Graphene/BN Encapsulation, Surface Functionalization and Molecular Adsorption on the Electronic Properties of Layered InSe: A First-Principles Study

• Authors : Kistanov, Andrey A.; Cai, Yongqing.; Zhou, Kun

Subjects: Condensed Matter - Materials Science

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Engineering 2D Material Exciton Line Shape with Graphene/ h ‑BN Encapsulation

• Authors : Steffi Y. Woo; Fuhui Shao; Ashish Arora

Subjects: Pharmacology; Science Policy; Infectious Diseases

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Engineering 2D material exciton lineshape with graphene/h-BN encapsulation

• Authors : Woo, Steffi; Shao, Fuhui; Arora, Ashish ...

Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); FOS: Physical sciences; [PHYS]Physics [physics]

• Source: ISSN: 1530-6984.

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Low Hysteresis MoS2-FET Enabled by CVD-Grown h-BN Encapsulation

• Authors : Piacentini, Agata; Schneider, Daniel; Otto, Martin

Subjects: DE

• Source: [Piscataway, NJ] : IEEE 2 Seiten (2021). doi:10.1109/DRC52342.2021.9467236 ; 2021 Device Research Conference (DRC) : 20-23 June 2021 ; 2021 Device Research Conference (DRC) : 20-23 June 2021 79.

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Low Hysteresis MoS2-FET Enabled by CVD-Grown h-BN Encapsulation

• Authors : Daniel Schneider; Daniel Neumaier; Aleksandra Radenovic

Subjects: Materials science; business.industry; Gate dielectric

• Source: DRC2 Seiten (2021). doi:10.1109/DRC52342.2021.9467236[2021 Device Research Conference, DRC, 2021-06-20-2021-06-23, Santa Barbara, CA, USA][2021 Device Research Conference, DRC,

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Breathing modes in few-layer MoTe$_2$ activated by h-BN encapsulation

• Authors : Adam Babiński; Maciej R. Molas; M. Grzeszczyk ...

Subjects: 010302 applied physics; [PHYS]Physics [physics]; Materials science

• Source: Applied Physics LettersApplied Physics Letters, American Institute of Physics, 2020, 116 (19), pp.191601. ⟨10.1063/1.5128048⟩

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Self-Heating Effect in a MoS 2 Field-Effect Transistor and Improved Heat Dissipation by the BN Capping Layer

• Authors : Weiqi Dang; Ying Huangfu; Mongur Hossain

Subjects: Biophysics; Medicine; Molecular Biology

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Effects of graphene/BN encapsulation, surface functionalization and molecular adsorption on the electronic properties of layered InSe: a first-principles study

• Authors : Yongqing Cai; Sergey V. Dmitriev; Andrey A. Kistanov ...

Subjects: Materials science; Band gap; General Physics and Astronomy

• Source: Physical chemistry chemical physics : PCCP. 20(18)

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