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One-step sputtering of MoSSe metastable phase as thin film and predicted thermodynamic stability by computational methods ...

• Authors : López-Galán, Oscar A.; Boll, Torben; Nogan, John

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Determining the Electronic Structure and Thermoelectric Properties of MoS₂/MoSe₂ Type‐I Heterojunction by DFT and the Landauer Approach

• Authors : López-Galán, Oscar A.; Perez, Israel; Nogan, John

Subjects: ddc:600; Technology; info:eu-repo/classification/ddc/600

• Source: Advanced Materials Interfaces, 10 (11), Art.-Nr.: 2202339 ; ISSN: 2196-7350

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Determining the Electronic Structure and Thermoelectric Properties of MoS 2 /MoSe 2 Type‐I Heterojunction by DFT and the Landauer Approach (Adv. Mater. Interfaces 11/2023)

• Authors : López‐Galán, Oscar A.; Perez, Israel; Nogan, John

Subjects: Mechanical Engineering; Mechanics of Materials

• Source: Advanced Materials Interfaces ; volume 10, issue 11 ; ISSN 2196-7350 2196-7350

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Correction to: The electronic states of ITO–MoS$_{2}$: Experiment and theory

• Authors : López‑Galán, Oscar A.; Ramos, Manuel; Nogan, John

Subjects: KNMFi; 2018-020-022609; APT

• Source: MRS communications, 12 (2), 283 - 283 ; ISSN: 2159-6859, 2159-6867

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Semimetal transition in curved MoS$_2$/MoSe$_2$ Van der Waals heterojunction by dispersion-corrected density functional theory

• Authors : López-Galán, Oscar A.; Ramos, Manuel

Subjects: Heterostructure; Semiconducting; Mo

• Source: MRS Communications, 12, 1154–1159 ; ISSN: 2159-6859, 2159-6867

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On the Electronic Structure of 2H-MoS(2): Correlating DFT Calculations and In-Situ Mechanical Bending on TEM

• Authors : Ramos, Manuel; López-Galán, Oscar A.; Polanco, Javier

Subjects: Article

• Source: Materials (Basel)

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Electronic states and metallic character of carbide Co/MoS 2 catalytic interface

• Authors : López-Galán, Oscar, A; Ramos, Manuel; Berhault, G. ...

Subjects: Electronic States; Carbide; MoS2

• Source: ISSN: 2516-1075 ; Electronic Structure ; https://hal.science/hal-03441563 ; Electronic Structure, 2021, 3 (2), pp.025002. ⟨10.1088/2516-1075/abf62c⟩.

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The electronic states of ITO–MoS₂: Experiment and theory

• Authors : López-Galán, Oscar A.; Ramos, Manuel; Nogan, John

Subjects: KNMFi; proposalID; 2018-021-023910

• Source: MRS communications, 12, 137–144 ; ISSN: 2159-6859, 2159-6867

تفاصيل العنوان

Determining the Electronic Structure and Thermoelectric Properties of MoS2/MoSe2 Type‐I Heterojunction by DFT and the Landauer Approach.

• Authors : López‐Galán, Oscar A.; Perez, Israel; Nogan, John

Subjects: HETEROJUNCTIONS; BAND gaps; SEEBECK coefficient

• Source: Advanced Materials Interfaces; 4/14/2023, Vol. 10 Issue 11, p1-8, 8p

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On the Electronic Structure of 2H-MoS 2 : Correlating DFT Calculations and In-Situ Mechanical Bending on TEM.

• Authors : Ramos, Manuel; López-Galán, Oscar A.; Polanco, Javier

Subjects: ELECTRONIC structure; FERMI energy; FERMI level

• Source: Materials (1996-1944); Oct2022, Vol. 15 Issue 19, p6732, 10p

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One-step sputtering of MoSSe metastable phase as thin film and predicted thermodynamic stability by computational methods.

• Authors : López-Galán OA; Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany. .; Institute for Applied Materials and Materials Science (IAM-WK), Karlsruhe Institute of Technology (KIT), Engelbert-Arnold-Str. 4, 76131, Karlsruhe, Germany. .

• Source: Scientific reports [Sci Rep] 2024 Mar 26; Vol. 14 (1), pp. 7104. Date of Electronic Publication: 2024 Mar 26.Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN:

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