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Multiphysics Characterizations of Vertical GaN Schottky Diodes

• Authors : Eric N’dohi, Atse Julien; Sonneville, Camille; Saidi, Soufiane ...

Subjects: Cathodo-luminescence (CL); micro-Raman spectroscopy; Current-voltage I (V)Ann Arbor; United States

• Source: 2022 Compound Semiconductor Week (CSW)https://hal.science/hal-038445852022 Compound Semiconductor Week (CSW), Jun 2022, Ann Arbor, United States. pp.1-2,

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Surge Current Capability of Ga2O3 Schottky Diodes

• Authors : Buttay, Cyril; Wong, Hiu-Yung; Wang, Boyan ...

Subjects: [SPI.NRJ]Engineering Sciences [physics]/Electric powerBlacksburg; VA; United States

• Source: CPES Annual Conference ; https://hal.science/hal-02968817 ; CPES Annual Conference, Aug 2020, Blacksburg, VA, United States

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Peripheral defects related to processing technique in GaN-on-GaN vertical devices

• Authors : Dagher, M; Brémond, G; Sonneville, Camille ...

Subjects: [SPI.NRJ]Engineering Sciences [physics]/Electric powerO'ahu (Honolulu); United States

• Source: Workshop on Nitride Semiconductors IWN 2024 ; https://hal.science/hal-04855750 ; Workshop on Nitride Semiconductors IWN 2024, Nov 2024, O'ahu (Honolulu), United States

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New photoresponse mode in GaN based detectors ; new photoresponse mode in GaN based detectors

• Authors : Duboz, Jean-Yves; Siviero, Matilde; Hugues, Maxime ...

Subjects: GaN; detector; protonHonolulu (Hawai'i); United States

• Source: IWN 2024 ; https://hal.science/hal-04877979 ; IWN 2024, NC State University (USA), Nov 2024, Honolulu (Hawai'i), United States

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Component Specifier.

• Source: Electronic Design. 11/29/2004, Vol. 52 Issue 26, p74-74. 1p. 1 Chart.

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A New Process for the Fabrication of SiC Power Devices and Systems on SiCOI (Silicon Carbide On Insulator) Substrates

• Authors : Templier, François; Daval, Nicolas; Cioccio, Léa Di ...

Subjects: [SPI.NRJ]Engineering Sciences [physics]/Electric powerBoston; United StatesBoston, United States

• Source: 2002 MRS Fall Meetinghttps://hal.science/hal-022984092002 MRS Fall Meeting, Dec 2002, Boston, United States. ⟨10.1557/PROC-742-K7.9⟩

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