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Conference

Impact of strain on access resistance in planar and nanowire CMOS devices

Subjects: [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsKyoto; JapanKyoto, Japan

  • Source: 2017 VLSI-Technology Technical Digest2017 IEEE Symposium on VLSI Technologyhttps://hal.science/hal-020502202017 IEEE Symposium on VLSI Technology, Jun 2017, Kyoto,

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Conference

The Route to Nanoscale Terahertz Technology: Nanowire-based Terahertz Detectors and Terahertz Modulators

Subjects: Nagoya; Japan

  • Source: Proceedings of the 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2018)

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Conference

Thermal consideration in nanoscale gate-all-around vertical transistors

Subjects: [SPI]Engineering Sciences [physics]; [PHYS]Physics [physics]Kyoto; JapanKyoto, Japan

  • Source: 2023 Silicon Nanoelectronics Workshop (SNW)Silicon Nanoelectronics Workshop (SNW 2023)https://laas.hal.science/hal-04189328Silicon Nanoelectronics Workshop (SNW 2023), Jun 2023,

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Academic Journal

Single-electron memory counts them in and out.

  • Source: Electronics Systems & Software. Dec2004/Jan2005, Vol. 2 Issue 6, p8-8. 1/3p. 1 Black and White Photograph.

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Conference

CMOS roadmap analysis from the perspective of III-V technology using MASTAR

Subjects: [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsKyoto; JapanKyoto, Japan

  • Source: 2015 SNW proceedings2015 Silicon Nanoelectronics Workshop (SNW)https://hal.science/hal-020497822015 Silicon Nanoelectronics Workshop (SNW), Jun 2015, Kyoto,

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  • 1-7 ل  7 نتائج ل ""Nanowire""