نتائج البحث

Large-Scale Defect Clusters with Hexagonal Honeycomb-like Arrangement in Ammonothermal GaN Crystals.

• Authors : Kirste, Lutz¹ (AUTHOR) ; Tran Thi Caliste, Thu Nhi² (AUTHOR); Weyher, Jan L.³ (AUTHOR)

• Source: Materials (1996-1944). Oct2022, Vol. 15 Issue 19, p6996. 26p.

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Synthesis of Gallium Nitride and Related Oxides Via Ammonobasic Reactive Sublimation (ARS)

• Authors : Luis Alberto Hernández-Hernández; Jorge R. Aguilar-Hernández; Francisco de Moure-Flores

Subjects: Gallium nitride; Sublimation; X-ray diffraction

• Source: Materials Research, Vol 20, Iss 6, Pp 1707-1712 (2017)

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On the mechanism of damage buildup in gallium nitride.

• Authors : Turos, A.^1,2 (AUTHOR)

• Source: Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena. Jun2013, Vol. 168 Issue 6, p431-441. 11p. 3 Black and White Photographs, 6 Graphs.

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Optimal Growth Conditions for Forming c-Axis (002) Aluminum Nitride Thin Films as a Buffer Layer for Hexagonal Gallium Nitride Thin Films Produced with In Situ Continual Radio Frequency Sputtering

• Authors : Wei-Sheng Liu; Balaji Gururajan; Sui-Hua Wu

Subjects: aluminum nitride; reactive sputtering; X-ray diffraction

• Source: Micromachines, Vol 13, Iss 9, p 1546 (2022)

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Luminescence and Crystalline Properties of InGaN-based LED on Si Substrate with AlN/GaN Superlattice Structure.

• Authors : Alias, Ezzah Azimah¹; Md Taib, Muhamad Ikram¹; Bakar, Ahmad Shuhaimi Abu²

• Source: Journal of Physical Science. 2021, Vol. 32 Issue 3, p1-11. 11p.

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The oxidation of gallium nitride epilayers in dry oxygen.

• Authors : Chen, P.; Zhang, R.; Xu, X.F.

• Source: Applied Physics A: Materials Science & Processing. 2000, Vol. 71 Issue 2, p191. 4p.

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Epitaxy of GaN(0001) and GaN(101) Layers on Si(100) Substrate.

• Authors : Bessolov, V. N.¹ (AUTHOR) ; Kompan, M. E.¹ (AUTHOR); Konenkova, E. V.¹ (AUTHOR)

• Source: Technical Physics Letters. Jun2019, Vol. 45 Issue 6, p529-532. 4p.

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Chloride vapor-phase epitaxy of gallium nitride at a reduced source temperature.

• Authors : Zhilyaev, Yu.¹ ; Rodin, S.¹

• Source: Technical Physics Letters. May2010, Vol. 36 Issue 5, p397-399. 3p. 2 Diagrams, 1 Chart, 1 Graph.

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Synthesis of Gallium Nitride and Related Oxides Via Ammonobasic Reactive Sublimation (ARS)

• Authors : Hernández-Hernández, Luis Alberto; Aguilar-Hernández, Jorge R.; Moure-Flores, Francisco de

Subjects: Gallium nitride; Sublimation; X-ray diffraction

• Source: Materials Research. December 2017 20(6)

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Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (110) Sapphire.

• Authors : Yunin, P. A.^1,2 ; Drozdov, Yu. N.¹; Khrykin, O. I.¹

• Source: Semiconductors. Nov2018, Vol. 52 Issue 11, p1412-1415. 4p.

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