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On properties of boundaries and electron conductivity in mesoscopic polycrystalline silicon films for memory devices

  • Authors : Nagaev, K [Russian Academy of Sciences, Moscow (Russian Federation). Inst. of Radio-engineering and Electronics]

  • Source: Conference: 2. international workshop on surfaces and interfaces of mesoscopic devices, Kaanapalli, HI (United States), 7-12 Dec 1997; Other Information: PBD: Feb 1998

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Conference

The effects of spatial location of defect states on the switching characteristics of amorphous and polycrystalline silicon thin film transistors: A numerical simulation using AMPS 2-D

  • Authors : Kalkan, A [Pennsylvania State Univ., University Park, PA (United States). Electronic Materials and Processing Research Lab.]

  • Source: Conference: 1994 international display research conference,Monterey, CA (United States),10-13 Oct 1994; Other Information: PBD: [1994]

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  • 1-10 of  222 نتائج ل ""Polycrystalline silicon""