نتائج البحث

Effect of annealing on the effective barrier height and ideality factor of nickel Schottky contacts to 4 H-SiC.

• Authors : Potapov, A. S.¹; Ivanov, P. A.¹ ; Samsonova, T. P.¹

• Source: Semiconductors. May2009, Vol. 43 Issue 5, p612-616. 5p. 4 Graphs.

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Photosensitivity and Schottky barrier height in Au- n-GaAs structures.

• Authors : Melebaev, D.¹; Melebaeva, G. D.¹; Rud’, V. Yu.²

• Source: Technical Physics. Jan2008, Vol. 53 Issue 1, p134-139. 6p. 1 Chart, 3 Graphs.

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A study on electron-wave filters using barrier height modulated multiple barrier structures.

• Authors : Sanada, Hirofumi¹; Watanabe, Kazuhisa¹

• Source: Electronics & Communications in Japan, Part 2: Electronics. Sep2003, Vol. 86 Issue 9, p11-19. 9p.

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Investigation of post-annealing effect on efficient ohmic contact to ZnO thin film using Ti/Al metallization strategy.

• Authors : Teja, Vikram¹; Sarkar, Argha¹ ; Venkataramana, Padarthi¹

• Source: International Journal of Nano Dimension. Spring2020, Vol. 11 Issue 2, p199-204. 6p.

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Barrier-height measurement for a gallium arsenide metal-semi-insulator interface.

• Authors : Ayzenshtat, G. I.¹ ; Lelekov, M. A.¹; Tolbanov, O. P.¹

• Source: Semiconductors. Nov2007, Vol. 41 Issue 11, p1310-1311. 2p. 3 Graphs.

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Electronic Properties of DNA-Based Schottky Barrier Diodes in Response to Alpha Particles.

• Authors : Al-Ta'ii HM; Low Dimensional Materials Research Centre (LDMRC), Department of Physics, University of Malaya, 50603 Kuala Lumpur, Malaysia. .; Department of Physics, University of AL-Muthanna, 66001 AL-Muthanna, Iraq. .

Subjects: Alpha Particles* ; Semiconductors*; DNA/DNA/DNA/*chemistry

• Source: Sensors (Basel, Switzerland) [Sensors (Basel)] 2015 May 21; Vol. 15 (5), pp. 11836-53. Date of Electronic Publication: 2015 May 21.Publisher: MDPI Country of Publication: Switzerland NLM ID: 101204366 Publication Model: Electronic Cited Medium: Internet ISSN: 1424-8220

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Effect of barrier height on friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals /

• Authors : Mishina, Hiroshi.; Buckley, Donald H.; Lewis Research Center.

Subjects: Mechanical wear; Metals; Semiconductors

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SCHOTTKY BARRIER JUNCTIONS OF GOLD WITH LEAD CHALCOGENIDES: GROWTH AND CHARACTERISTICS.

• Authors : Kumar, Sushil¹ ; Khan, M. A. Majeed^1,2

• Source: Chalcogenide Letters. Mar2012, Vol. 9 Issue 3, p99-103. 5p.

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The Schottky Barrier on a Contact of a Magnetic 3d Metal with a Semiconductor.

• Authors : Davydov, S. Yu.¹ (AUTHOR) ; Posrednik, O. V.² (AUTHOR)

• Source: Technical Physics Letters. Jul2021, Vol. 47 Issue 7, p550-552. 3p.

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Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures.

• Authors : Spera, Monia^1,2,3 (AUTHOR) ; Greco, Giuseppe¹ (AUTHOR) ; Lo Nigro, Raffaella¹ (AUTHOR)

• Source: Energies (19961073). 7/15/2019, Vol. 12 Issue 14, p2655-2655. 1p. 2 Black and White Photographs, 7 Graphs.

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