نتائج البحث

Proposal and experimental study of a high-precision polycrystalline-silicon film resistor with a quasi-double-layer structure.

• Authors : Shimamoto, Hiromi¹; Ohnishi, Kazuhiro²; Shiba, Takeo²

• Source: Electronics & Communications in Japan, Part 2: Electronics. Jul2004, Vol. 87 Issue 7, p9-17. 9p.

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Heterogeneous melting kinetics in polycrystalline aluminum.

• Authors : Liao, Yi¹ (AUTHOR); Xiang, Meizhen² (AUTHOR) ; Zhu, Xiaohua¹ (AUTHOR)

Subjects: *ISOTHERMAL transformation diagrams; *ALUMINUM; *WEIBULL distribution

• Source: PLoS ONE. 3/10/2020, Vol. 15 Issue 3, p1-9. 9p.

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Estimation of the deformation-potential constant for p-type isotropic polycrystalline silicon through the deformation potential of a p-type silicon single crystal.

• Authors : Moiseev, A. G.¹

• Source: Russian Physics Journal. Jul2011, Vol. 54 Issue 2, p226-238. 13p.

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Fracture Strength of Polycrystalline Silicon Wafers for the Photovoltaic Industry.

• Authors : Borrero-López, Oscar^1,2; Vodenitcharova, Tania¹; Hoffman, Mark¹

• Source: Journal of the American Ceramic Society. Nov2009, Vol. 92 Issue 11, p2713-2717. 5p. 3 Black and White Photographs, 2 Diagrams, 2 Graphs.

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Polycrystalline silicon on glass for thin-film solar cells.

• Authors : Green, Martin A.¹

• Source: Applied Physics A: Materials Science & Processing. Jul2009, Vol. 96 Issue 1, p153-159. 7p. 3 Color Photographs, 3 Diagrams, 4 Graphs.

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Characterization of strength properties of thin polycrystalline silicon films for MEMS applications.

• Authors : Boroch, R.¹ ; Wiaranowski, J.¹; Mueller-Fiedler, R.¹

• Source: Fatigue & Fracture of Engineering Materials & Structures. Jan2007, Vol. 30 Issue 1, p2-12. 11p. 1 Black and White Photograph, 7 Diagrams, 1 Chart, 6 Graphs.

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Scattering of Charge Carriers at the Boundaries of Crystallites in Films of Polycrystalline Silicon.

• Authors : Gridchin, V. A.¹; Lyubimski&itlde;, V. M.¹

• Source: Semiconductors. Feb2005, Vol. 39 Issue 2, p192-197. 6p.

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Thin film polycrystalline silicon solar cell on ceramics with a seeding layer formed via aluminium-induced crystallisation of amorphous silicon.

• Authors : Ornaghi, C.¹; Stöger, M.²; Beaucarne, G.¹

• Source: IEE Proceedings -- Circuits, Devices & Systems. Aug2003, Vol. 150 Issue 4, p287. 6p.

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Microcrystalline and polycrystalline silicon films for solar cells obtained by gas-jet electron-beam PECVD method.

• Authors : Bilyalov, R.¹; Poortmans, J.¹; Sharafutdinov, R.²

• Source: IEE Proceedings -- Circuits, Devices & Systems. Aug2003, Vol. 150 Issue 4, p293. 7p.

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Oxygen plasma and high pressure H[sub 2] O vapor heat treatments used to fabricate polycrystalline silicon thin film transistors.

• Authors : Watakabe, H.; Sameshima, T.

• Source: Applied Physics A: Materials Science & Processing. 2003, Vol. 77 Issue 1, p141. 4p.

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