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Comparative Radiation Response of GaN and Ga2O3 Exposed to Ground-Level Neutrons

• Authors : Autran, Jean-Luc; Munteanu, Daniela;

Subjects: gallium oxide; nuclear reactions; Geant4

• Source: ISSN: 2073-4352 ; Crystals ; https://hal.science/hal-04420501 ; Crystals, 2024, 14 (2), pp.128. ⟨10.3390/cryst14020128⟩.

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Comparative Radiation Response of GaN and Ga2O3 Exposed to Ground-Level Neutrons

• Authors : Autran, Jean-Luc; Munteanu, Daniela;

Subjects: gallium oxide; nuclear reactions; Geant4

• Source: ISSN: 2073-4352 ; Crystals ; https://hal.science/hal-04420501 ; Crystals, 2024, 14 (2), pp.128. ⟨10.3390/cryst14020128⟩.

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Comparative Radiation Response of GaN and Ga 2 O 3 Exposed to Ground-Level Neutrons

• Authors : Jean-Luc Autran; Daniela Munteanu

Subjects: atmospheric neutrons; neutron–semiconductor interactions; wide-bandgap semiconductors

• Source: Crystals, Vol 14, Iss 2, p 128 (2024)

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Susceptibility of Group-IV and III-V Semiconductor-Based Electronics to Atmospheric Neutrons Explored by Geant4 Numerical Simulations

• Authors : Munteanu, Daniela; Autran, Jean-Luc;

Subjects: terrestrial cosmic rays; atmospheric neutrons; neutron-semiconductor interactions

• Source: Numerical Simulations in Engineering and Science ; https://amu.hal.science/hal-02096696 ; Numerical Simulations in Engineering and Science, InTech, 2018, ⟨10.5772/intechopen.71528⟩ ;

تفاصيل العنوان

Susceptibility of Group-IV and III-V Semiconductor-Based Electronics to Atmospheric Neutrons Explored by Geant4 Numerical Simulations

• Authors : Munteanu, Daniela; Autran, Jean-Luc;

Subjects: terrestrial cosmic rays; atmospheric neutrons; neutron-semiconductor interactions

• Source: Numerical Simulations in Engineering and Science ; https://amu.hal.science/hal-02096696 ; Numerical Simulations in Engineering and Science, InTech, 2018, ⟨10.5772/intechopen.71528⟩ ;

تفاصيل العنوان

Susceptibility of Group-IV and III-V Semiconductor-Based Electronics to Atmospheric Neutrons Explored by Geant4 Numerical Simulations

• Authors : Munteanu, Daniela; Autran, Jean-Luc;

Subjects: nuclear reactions; III-V semiconductors; terrestrial cosmic rays

• Source: Numerical Simulations in Engineering and Science ; https://hal-amu.archives-ouvertes.fr/hal-02096696 ; Numerical Simulations in Engineering and Science, InTech, 2018, ⟨10.5772/intechopen.71528⟩ ;

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Proton- and Neutron-Induced SEU Cross-Section Modeling and Simulation: A Unified Analytical Approach

• Authors : Gennady I. Zebrev; Nikolay N. Samotaev; Rustem G. Useinov

Subjects: direct ionization; low-energy protons; modeling

• Source: Radiation, Vol 4, Iss 1, Pp 37-49 (2024)

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Neutron density calculation using the generalised adams-bashforth-moulton method ; Cálculo da densidade de nêutrons usando o método generalizado de Adams-Bashforth-Moulton ; Cálculo de densidad de neutrones utilizando el método generalizado de Adams-Bashforth-Moulton

• Authors : Suescún-Díaz, Daniel; Rasero, Diego; Lozano Parada, Jaime Humberto

Subjects: Reacciones nucleares; Ecuaciones diferenciales con retardo - Soluciones numéricas; Nuclear reactions

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Medida do espectro de energia dos neutrons no nucleo do reator IPEN/MB-01

• Authors : BITELLI, U.D.; MARTINS, F.P.G.; JEREZ, R.

Subjects: activation detectors; capture-to-fission ratio; experimental data

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Simultaneous Measurements of Secondary Gamma Rays and Neutrons from Fast Neutron Scattering on 56Fe with GENESIS

• Authors : Gordon, Joseph;

Subjects: Nuclear physics and radiation; Gamma Ray Spectroscopy; Inelastic Scattering

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