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A Study on the Effects of Gallium Droplet Consumption and Post Growth Annealing on Te-Doped GaAs Nanowire Properties Grown by Self-Catalyzed Molecular Beam Epitaxy.

• Authors : Devkota, Shisir¹ (AUTHOR) ; Parakh, Mehul¹ (AUTHOR) ; Ramaswamy, Priyanka² (AUTHOR)

• Source: Catalysts (2073-4344). May2022, Vol. 12 Issue 5, p451-N.PAG. 9p.

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Different III-V semiconductor nanowires with quantum dots on silicon: growth by molecular-beam epitaxy and properties

• Authors : Rodion R. Reznik; Konstantin P. Kotlyar; Igor V. Shtrom

Subjects: semiconductors; iii-v; nanowires

• Source: Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki, Vol 21, Iss 6, Pp 866-871 (2021)

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Formation of Hexagonal Germanium on AlGaAs Nanowire Surfaces by Molecular-Beam Epitaxy.

• Authors : Ilkiv, I. V.^1,2 (AUTHOR) ; Kotlyar, K. P.² (AUTHOR); Kirilenko, D. A.³ (AUTHOR)

• Source: Semiconductors. Aug2021, Vol. 55 Issue 8, p678-681. 4p.

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Selective-Area Growth of GaN Nanowires on Patterned SiOx/Si Substrates by Molecular Beam Epitaxy.

• Authors : Gridchin, V. O.¹ (AUTHOR) ; Kotlyar, K. P.¹ (AUTHOR); Reznik, R. R.² (AUTHOR)

• Source: Technical Physics Letters. 2020, Vol. 46 Issue 11, p1080-1083. 4p.

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A Study on the Effects of Gallium Droplet Consumption and Post Growth Annealing on Te-Doped GaAs Nanowire Properties Grown by Self-Catalyzed Molecular Beam Epitaxy

• Authors : Shisir Devkota; Mehul Parakh; Priyanka Ramaswamy

Subjects: nanowires; molecular beam epitaxy (MBE); Te-doping

• Source: Catalysts, Vol 12, Iss 5, p 451 (2022)

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Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

• Authors : Alexey D. Bolshakov; Alexey M. Mozharov; Georgiy A. Sapunov

Subjects: A3B5 on Si; epitaxy; GaN

• Source: Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 146-154 (2018)

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Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon.

• Authors : Cirlin, G. E.^1,2,3,4 ; Reznik, R. R.³; Samsonenko, Yu. B.^1,2

• Source: Semiconductors. Nov2018, Vol. 52 Issue 11, p1416-1419. 4p.

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Growth of PbTe nanowires by molecular beam epitaxy

• Authors : Schellingerhout, Sander G.; De Jong, Eline J.; Gomanko, Maksim

Subjects: MBE; nanowires; PbTe

• Source: Schellingerhout , S G , De Jong , E J , Gomanko , M , Guan , X , Jiang , Y , Hoskam , M S M , Jung , J , Koelling , S , Moutanabbir , O , Verheijen , M A , Frolov , S M & Bakkers , E P A M 2022 , '

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Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy.

• Authors : Reznik, R. R.^1,2,3,4; Cirlin, G. E.^1,2,3,4 ; Shtrom, I. V.^1,2

• Source: Technical Physics Letters. Feb2018, Vol. 44 Issue 2, p112-114. 3p.

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Characterization of Sub-Monolayer Contaminants at the Regrowth Interface in GaN Nanowires Grown by Selective-Area Molecular Beam Epitaxy

• Authors : Paul Blanchard; Matt Brubaker; Todd Harvey

Subjects: gallium nitride; defects; nanowires

• Source: Crystals, Vol 8, Iss 4, p 178 (2018)

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