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Subject : mosfet

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Academic Journal

Electrical properties of self-aligned gate-all-around polycrystalline silicon nanowires field effect transistors

Authors : Le Borgne, Brice; Salaün, Anne-Claire; Pichon, Laurent ...

Subjects: CMOS technology; Gate-all-around; Mosfet

Source: ISSN: 0167-9317.

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High-performance BIMOS using self-aligning polysilicon electrode

Authors : Naohiro Momma; Hideo Homma; Yutaka Misawa

Subjects: Materials science; Plasma etching; Computer Networks and Communications

Source: Electronics and Communications in Japan (Part II: Electronics). 73:68-78

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Dissertation/ Thesis

Fabrication, characterisation and modelling of nanocrystalline silicon thin-film transistors obtained by hot-wire chemical vapour deposition.

Authors : Dosev, Dosi Konstantinov; University/Department: Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; ...

Subjects: Atlas; tft; simulation538.9; 621.3

Source: TDX (Tesis Doctorals en Xarxa)

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Dissertation/ Thesis

Characterization and modelling of MOS transistors from advanced technologies (FDSOI, nanowire, GaN HEMT, LTPS…) ; Caractérisation et modélisation des composants MOS des technologies avancées (FDSOI, nanofil, GaN HEMT, LTPS…)

Authors : Kim, Donghyun;

Subjects: Charactertization; Microelectronics; Mosfet

Source: https://theses.hal.science/tel-04531810 ; Micro and nanotechnologies/Microelectronics. Université Grenoble Alpes [2020-.]; Koryŏ taehakkyo. Asea munje yŏn’guso (Séoul, Corée S.), 2023.

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Dissertation/ Thesis

Fabrication, characterisation and modelling of nanocrystalline silicon thin-film transistors obtained by hot-wire chemical vapour deposition.

Authors : Dosev, Dosi Konstantinov;

Subjects: Atlas; tft; simulation53; 62

Source: TDX (Tesis Doctorals en Xarxa)

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