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  • 1-10 ل  18 نتائج ل ""Nanostructure""

فلترة النتائج

Subject : gallium arsenide فلترة بواسطة : مؤلف
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Academic Journal

Toward thin GaSb Buffer Layers Grown on On‐Axis (001) Silicon by Molecular Beam Epitaxy

Subjects: antiphase domain; Gallium antimonide; Gallium arsenide

  • Source: ISSN: 2751-1200 ; Advanced Physics Research ; https://hal.science/hal-04678079 ; Advanced Physics Research, In press, ⟨10.1002/apxr.202400090⟩.

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Academic Journal

Toward thin GaSb Buffer Layers Grown on On‐Axis (001) Silicon by Molecular Beam Epitaxy

Subjects: antiphase domain; Gallium antimonide; Gallium arsenide

  • Source: ISSN: 2751-1200 ; Advanced Physics Research ; https://hal.science/hal-04678079 ; Advanced Physics Research, In press, ⟨10.1002/apxr.202400090⟩.

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Academic Journal

Toward thin GaSb Buffer Layers Grown on On‐Axis (001) Silicon by Molecular Beam Epitaxy

Subjects: antiphase domain; Gallium antimonide; Gallium arsenide

  • Source: ISSN: 2751-1200 ; Advanced Physics Research ; https://hal.science/hal-04678079 ; Advanced Physics Research, In press, ⟨10.1002/apxr.202400090⟩.

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Academic Journal

Epitaxial Growth of III‐Vs on On‐Axis Si: Breaking the Symmetry for Antiphase Domains Control and Burying

Subjects: Semiconductor; III-V on Si; Molecular beam epitaxy

  • Source: ISSN: 2195-1071 ; Advanced Optical Materials ; https://hal.science/hal-04107444 ; Advanced Optical Materials, 2023, 11 (15), ⟨10.1002/adom.202203050⟩.

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Academic Journal

Epitaxial Growth of III‐Vs on On‐Axis Si: Breaking the Symmetry for Antiphase Domains Control and Burying

Subjects: Semiconductor; III-V on Si; Molecular beam epitaxy

  • Source: ISSN: 2195-1071 ; Advanced Optical Materials ; https://hal.science/hal-04107444 ; Advanced Optical Materials, 2023, 11 (15), ⟨10.1002/adom.202203050⟩.

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Academic Journal

Epitaxial Growth of III‐Vs on On‐Axis Si: Breaking the Symmetry for Antiphase Domains Control and Burying

Subjects: Semiconductor; III-V on Si; Molecular beam epitaxy

  • Source: ISSN: 2195-1071 ; Advanced Optical Materials ; https://hal.science/hal-04107444 ; Advanced Optical Materials, 2023, 11 (15), ⟨10.1002/adom.202203050⟩.

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Academic Journal

Epitaxial Growth of III‐Vs on On‐Axis Si: Breaking the Symmetry for Antiphase Domains Control and Burying

Subjects: Semiconductor; III-V on Si; Molecular beam epitaxy

  • Source: ISSN: 2195-1071 ; Advanced Optical Materials ; https://hal.science/hal-04107444 ; Advanced Optical Materials, 2023, 11 (15), ⟨10.1002/adom.202203050⟩.

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Academic Journal

Epitaxial Growth of III‐Vs on On‐Axis Si: Breaking the Symmetry for Antiphase Domains Control and Burying

Subjects: Semiconductor; III-V on Si; Molecular beam epitaxy

  • Source: ISSN: 2195-1071 ; Advanced Optical Materials ; https://hal.science/hal-04107444 ; Advanced Optical Materials, 2023, ⟨10.1002/adom.202203050⟩.

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Academic Journal

Epitaxial Growth of III‐Vs on On‐Axis Si: Breaking the Symmetry for Antiphase Domains Control and Burying

Subjects: Semiconductor; III-V on Si; Molecular beam epitaxy

  • Source: ISSN: 2195-1071 ; Advanced Optical Materials ; https://hal.science/hal-04107444 ; Advanced Optical Materials, 2023, 11 (15), ⟨10.1002/adom.202203050⟩.

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Conference

Type II heterojunction tunnel diodes based on GaAs for multi-junction solar cells: Fabrication, characterization and simulation

Subjects: direct interband tunneling; tunneling current density; semiclassical interband tunnelingToulouse; France

  • Source: IEEE Xplore ; 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC) ; https://amu.hal.science/hal-01436488 ; 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016,

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  • 1-10 ل  18 نتائج ل ""Nanostructure""