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Academic Journal

Investigation of Radiation Effect on Structural and Optical Properties of GaAs under High-Energy Electron Irradiation.

Authors : Phakkhawan, Authit¹ (AUTHOR); Sakulkalavek, Aparporn¹ (AUTHOR); Buranurak, Siritorn² (AUTHOR)

Source: Materials (1996-1944). Sep2022, Vol. 15 Issue 17, p5897. 16p.

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Academic Journal

Electron energy spectrum of the spherical GaAs/AlxGa1-x As quantum dot with several impurities on the surface.

Authors : Leshko, R. Ya.¹ ; Bilynskyi, I. V.^1,2; Leshko, O. V.¹

Source: Condensed Matter Physics. 2023, Vol. 26 Issue 2, p1-8. 8p.

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Academic Journal

Blocking-Layer Design for the Suppression of Parasitic Recombination in High-Power Laser Diodes with a GaAs Waveguide.

Authors : Muretova, M. E.¹ (AUTHOR); Zubov, F. I.^1,2 (AUTHOR) ; Asryan, L. V.³ (AUTHOR)

Source: Semiconductors. Apr2022, Vol. 56 Issue 4, p246-252. 7p.

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Academic Journal

Highly polarized emission in spin resolved photoelectron spectroscopy of alpha-Fe(001)/GaAs(001)

Authors : Shen, T

Source: Surface Science; 604; 17-18; Other Information: Journal Publication Date: 08/30/2010

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Academic Journal

Temperature-dependent spectral response mechanism in GaAs-based blocked-impurity-band (BIB) far-infrared detectors.

Authors : Wang, Xiaodong¹ (AUTHOR); Chen, Yulu¹ (AUTHOR) ; Chen, Xiaoyao² (AUTHOR)

Source: Optical & Quantum Electronics. Jan2020, Vol. 52 Issue 1, p1-8. 8p.

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Academic Journal

Marginal metallic state at a fractional filling of '8/5' and '4/3' of Landau levels in the GaAs/AlGaAs 2D electron system.

Authors : Mani, R. G.¹ ; Wijewardena, U. K.¹; Nanayakkara, T. R.¹

Source: Scientific Reports. 7/22/2021, Vol. 11 Issue 1, p1-12. 12p.

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Academic Journal

Effects of 1-MeV Electron Irradiation on the Photoluminescence of GaInNAs|GaAs Single Quantum Well Structure.

Authors : Sailai, M.¹ (AUTHOR); Aierken, A.¹ (AUTHOR) ; Qiqi, L.¹ (AUTHOR)

Source: Semiconductors. May2020, Vol. 54 Issue 5, p554-557. 4p.

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Conference

Testing a GaAs cathode in SRF gun

Authors : Holmes, D

Source: Conference: 2011 Particle Accelerator Conference (PAC'11); New York, NY; 20110328 through 20110401

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Conference

Quantum efficiency temporal response and lifetime of a GaAs cathode in SRF electron gun

Authors : Holmes, D

Source: Conference: First International Particle Accelerator Conference (IPAC) 2010; Kyoto, Japan; 20100523 through 20100528

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Conference

Heat load of a P-doped GaAs photocathode in SRF electron gun

Authors : Holmes, D

Source: Conference: First International Particle Accelerator Conference (IPAC) 2010; Kyoto, Japan; 20100523 through 20100528

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نتائج البحث

فلترة النتائج

Investigation of Radiation Effect on Structural and Optical Properties of GaAs under High-Energy Electron Irradiation.

Electron energy spectrum of the spherical GaAs/AlxGa1-x As quantum dot with several impurities on the surface.

Blocking-Layer Design for the Suppression of Parasitic Recombination in High-Power Laser Diodes with a GaAs Waveguide.

Highly polarized emission in spin resolved photoelectron spectroscopy of alpha-Fe(001)/GaAs(001)

Temperature-dependent spectral response mechanism in GaAs-based blocked-impurity-band (BIB) far-infrared detectors.

Marginal metallic state at a fractional filling of '8/5' and '4/3' of Landau levels in the GaAs/AlGaAs 2D electron system.

Effects of 1-MeV Electron Irradiation on the Photoluminescence of GaInNAs|GaAs Single Quantum Well Structure.

Testing a GaAs cathode in SRF gun

Quantum efficiency temporal response and lifetime of a GaAs cathode in SRF electron gun

Heat load of a P-doped GaAs photocathode in SRF electron gun

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