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Subject : crystallization فلترة بواسطة : مصطلح موضوعي

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Academic Journal

Gold-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide.

Authors : Lunev, N. A.^1,2 (AUTHOR); Zamchiy, A. O.^1,2 (AUTHOR) ; Baranov, E. A.¹ (AUTHOR)

Source: Technical Physics Letters. Oct2021, Vol. 47 Issue 10, p726-729. 4p.

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Academic Journal

Interface characteristics of different bonded structures fabricated by low-temperature a-Ge wafer bonding and the application of wafer-bonded Ge/Si photoelectric device.

Authors : Ke, Shaoying¹; Ye, Yujie¹; Wu, Jinyong¹

Source: Journal of Materials Science. Feb2019, Vol. 54 Issue 3, p2406-2416. 11p. 3 Diagrams, 1 Chart, 4 Graphs.

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Academic Journal

Correlation between three-dimensional and cross-sectional characteristics of ideal grain growth: large-scale phase-field simulation study.

Authors : Miyoshi, Eisuke¹ ; Takaki, Tomohiro² ; Ohno, Munekazu³

Source: Journal of Materials Science. Nov2018, Vol. 53 Issue 21, p15165-15180. 16p. 2 Color Photographs, 1 Chart, 8 Graphs.

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Academic Journal

Electron-Beam Crystallization of Thin Films of Amorphous Silicon Suboxide.

Authors : Baranov, E. A.¹ (AUTHOR) ; Konstantinov, V. O.¹ (AUTHOR); Shchukin, V. G.¹ (AUTHOR)

Source: Technical Physics Letters. Mar2021, Vol. 47 Issue 3, p263-265. 3p.

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Academic Journal

Influence of Substrate on Crystal Orientation of Large-Grained Si Thin Films Formed by Metal-Induced Crystallization.

Authors : Toko, Kaoru¹ ; Nakata, Mitsuki¹ ; Okada, Atsushi¹

Source: International Journal of Photoenergy. 4/23/2015, Vol. 2015, p1-7. 7p.

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Academic Journal

Recrystallization Kinetics of 3 C Silicon Carbide Implanted with 400 keV Cesium Ions.

Authors : Osterberg, Daniel D.¹; Youngsman, John^1,2; Ubic, Rick^1,2,3

Source: Journal of the American Ceramic Society. Oct2013, Vol. 96 Issue 10, p3290-3295. 6p. 2 Black and White Photographs, 3 Diagrams, 5 Graphs.

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Academic Journal

A Low Cost Optical Inspection System for Rapid Measurement of Surface Roughness of Polycrystalline Silicone Fabricated by Frontside and Backside Excimer Laser Crystallization.

Authors : KUO, C. C.¹ ; CHEN, V. R.¹

Source: Lasers in Engineering (Old City Publishing). 2013, Vol. 24 Issue 5/6, p315-330. 16p.

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Academic Journal

Fabrication of Large-Grain Thick Polycrystalline Silicon Thin Films via Aluminum-Induced Crystallization for Application in Solar Cells.

Authors : Hsiao-Yeh Chu¹ ; Min-Hang Weng²; Chen Lin³

Source: International Journal of Photoenergy. 2013, p1-4. 4p.

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Academic Journal

Structural and Electrical Properties of Polysilicon Films Prepared by AIC Process for a Polycrystalline Silicon Solar Cell Seed Layer.

Authors : Hyejeong Jeong¹; Seongjae Boo¹

Source: International Journal of Photoenergy. 2012, Special section p1-7. 7p.

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Evaluation of trap states at front and back oxide interfaces and grain boundaries using electrical characteristic analysis and device simulation of polycrystalline silicon thin-film transistorsThis paper is recommended by the Silicon Devices and Materials Technology Group Committee.

Authors : Kimura, Mutsumi¹

Source: Electronics & Communications in Japan, Part 2: Electronics. Feb2005, Vol. 88 Issue 2, p1-10. 10p.

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فلترة النتائج

Gold-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide.

Interface characteristics of different bonded structures fabricated by low-temperature a-Ge wafer bonding and the application of wafer-bonded Ge/Si photoelectric device.

Correlation between three-dimensional and cross-sectional characteristics of ideal grain growth: large-scale phase-field simulation study.

Electron-Beam Crystallization of Thin Films of Amorphous Silicon Suboxide.

Influence of Substrate on Crystal Orientation of Large-Grained Si Thin Films Formed by Metal-Induced Crystallization.

Recrystallization Kinetics of 3 C Silicon Carbide Implanted with 400 keV Cesium Ions.

A Low Cost Optical Inspection System for Rapid Measurement of Surface Roughness of Polycrystalline Silicone Fabricated by Frontside and Backside Excimer Laser Crystallization.

Fabrication of Large-Grain Thick Polycrystalline Silicon Thin Films via Aluminum-Induced Crystallization for Application in Solar Cells.

Structural and Electrical Properties of Polysilicon Films Prepared by AIC Process for a Polycrystalline Silicon Solar Cell Seed Layer.

Evaluation of trap states at front and back oxide interfaces and grain boundaries using electrical characteristic analysis and device simulation of polycrystalline silicon thin-film transistorsThis paper is recommended by the Silicon Devices and Materials Technology Group Committee.

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