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Versatile Large-Area Custom-Feature van der Waals Epitaxy of Topological Insulators

• Authors : Anupam Roy; Tanuj Trivedi; Emily S. Walker

Subjects: Materials science; Fabrication; FOS: Physical sciences

• Source: ACS Nano. 11:7457-7467

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Van der Waals epitaxy of continuous thin films of 2D materials using atomic layer deposition in low temperature and low vacuum conditions

• Authors : Jani Hämäläinen; Miika Mattinen; Peter J. King ...

Subjects: Materials science; vdW epitaxy; 116 Chemical sciences

• Source: 2D Materials. 7:011003

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Morphology Control in van der Waals Epitaxy of Bismuth Telluride Topological Insulators

• Authors : Sérgio L. Morelhão; Celso I. Fornari; Eduardo Abramof

Subjects: Materials science; chemistry.chemical_element; FOS: Physical sciences

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Optoelectronic Materials: Ultrathin 2D GeSe2 Rhombic Flakes with High Anisotropy Realized by Van der Waals Epitaxy (Adv. Funct. Mater. 47/2017)

• Authors : Xing Zhou; Tianyou Zhai; Qi Zhang

Subjects: Materials science; business.industry; chemistry.chemical_element

• Source: Advanced Functional Materials. 27:1770279

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Superconducting Ga/GaSe layers grown by van der Waals epitaxy

• Authors : Bernard Gil; Benjamin A. Piot; Wilfried Desrat ...

Subjects: Materials science; Polymers and Plastics; GaSe

• Source: Materials Research ExpressMaterials Research Express, IOP Publishing Ltd, 2018, 5, pp.045901. ⟨10.1088/2053-1591/aab8c5⟩

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van der Waals epitaxy of large-area continuous ReS2 films on mica substrate

• Authors : Xiaoguo Song; Dan-Dan Ren; Liang Zhen

Subjects: Materials science; General Chemical Engineering; Transistor

• Source: RSC Advances. 7:24188-24194

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Ultrathin graphdiyne film on graphene through solution-phase van der Waals epitaxy

• Authors : Xiaohui Yi; Shuqing Zhang; Lianming Tong

Subjects: Materials science; Band gap; Materials Science

• Source: Science Advances

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Strained-Layer van der Waals Epitaxy in a Langmuir-Blodgett Film

• Authors : Joseph A. Zasadzinski; Daniel K. Schwartz; R. Viswanathan

Subjects: Amorphous silicon; Chemical Phenomena; Stereochemistry

• Source: Science. 261:449-452

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Chalcogenide-based van der Waals epitaxy: Interface conductivity of tellurium on Si(111)

• Authors : Felix Lüpke; Gustav Bihlmayer; Ivan Ošt’ádal

Subjects: Materials science; Condensed matter physics; Chalcogenide

• Source: Physical review / B 96(3), 035301 (2017). doi:10.1103/PhysRevB.96.035301

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Optical and photovoltaic properties of indium selenide thin films prepared by van der Waals epitaxy

• Authors : L. Roa; Alfredo Segura; C. Pettenkofer

Subjects: Materials science; Band gap; Exciton

• Source: SANCHEZ ROYO, J.F. ; SEGURA, A. ; LANG, O. ; SCHAAR, E. ; PETTENKOFER, C. ; JAEGERMANN, W. ; ROA, L. ; CHEVY, A. Optical and photovoltaic properties of indium selenide thin films prepared by

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