نتائج البحث

Efficiency of Heterojunction Solar Cells Based on Optical Band Gap.

• Authors : Meem, Mahseena Akter¹; Ahsan, M. Rezwanul¹; Muhibbullah, M.²

Subjects: *BAND gaps; *PHOTOVOLTAIC cells; *THIN films

• Source: Iraqi Journal of Physics. 2024, Vol. 22 Issue 3, p139-149. 11p.

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Tuning fermi level and band gap in Li4Ti5O12 by doping and vacancy for ultrafast Li+ insertion/extraction.

• Authors : Wang, Zhenya^1,2 (AUTHOR); Guo, Hao³ (AUTHOR); Ning, De⁴ (AUTHOR)

• Source: Journal of the American Ceramic Society. Nov2021, Vol. 104 Issue 11, p5934-5945. 12p. 2 Charts, 4 Graphs.

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Tuning fermi level and band gap in Li 4 Ti 5 O 12 by doping and vacancy for ultrafast Li + insertion/extraction

• Authors : Dongfeng Chen; Lirong Zheng; Xiaobai Ma

Subjects: symbols.namesake; Materials science; Condensed matter physics

• Source: Journal of the American Ceramic Society. 104:5934-5945

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Fermi level engineering of metallicity-sorted metallic single-walled carbon nanotubes by encapsulation of few-atom-thick crystals of silver chloride

• Authors : Christian Kramberger; Marianna V. Kharlamova; Dominik Eder

Subjects: Nanotube; Materials science; Band gap

• Source: Journal of Materials Science. 53:13018-13029

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Mg-doped LaAlO3 structure: a theoretical investigation of indirect to direct bandgap and brittle to ductile transition.

• Authors : Zahoor, Aliza; Mahmood, Tariq ; Khan, Muhammad Isa

• Source: Canadian Journal of Physics. 2023, Vol. 101 Issue 7, p330-338. 9p.

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Quasi Fermi Level Scan of Band Gap Energy in Photojunction

• Authors : Bogdan J. Kowalski; Ewa Placzek-Popko; S. Chusnutdinow

Subjects: Physics; Condensed matter physics; Band gap

• Source: Acta Physica Polonica A. 134:590-595

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Field effect and capacitance of silicon crystals with hopping conductivity over point radiation defects pinning the Fermi level

• Authors : A. G. Zabrodskii; Nikolai A. Poklonski; S. A. Vyrko

Subjects: Materials science; Condensed matter physics; Band gap

• Source: Semiconductors. 41:1300-1306

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The model of self-compensation and pinning of the Fermi level in irradiated semiconductors

• Authors : L. S. Smirnov; N. G. Kolin; V. N. Brudnyĭ

Subjects: Materials science; Condensed matter physics; business.industry

• Source: Semiconductors. 41:1011-1020

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The level of local charge-neutrality and pinning of the Fermi level in irradiated nitrides wz-III-N (BN, AlN, GaN, InN)

• Authors : N. G. Kolin; A. V. Kosobutsky; V. N. Brudnyi

Subjects: Materials science; Condensed matter physics; Band gap

• Source: Semiconductors. 43:1271-1279

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Electronic states near fermi level in superconductors La2 −xSrxCuO4by means of x-ray absorption spectra near Cu-Kand La-Ledges

• Authors : Masanori Hidaka; N. Tokiwa; Jae-Young Choi

Subjects: Extended X-ray absorption fine structure; Absorption spectroscopy; Chemistry

• Source: Phase Transitions. 76:905-921

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