Source: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)https://hal.science/hal-043053702023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Mar

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Conference

Evidence of Trapping and Electrothermal Effects in Vertical Junctionless Nanowire Transistors

Authors : Wang, Yifang; Rezgui, Houssem; Chhandak, Mukherjee ...

Subjects: vertical junctionless nanowire transistors; electrothermal effects; trappingTarragona; Spain

Source: 9th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2023https://hal.science/hal-042316059th Joint International EuroSOI

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Academic Journal

Piezo‐Semiconductor Coupled Model for the Simulation of Zinc Oxide 1–3 Piezo‐Composite

Authors : Dumons, Emmanuel; Tran‐huu‐hue, Louis, Pascal; Poulin‐vittrant, Guylaine ...

Subjects: [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics; [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

Source: EISSN: 2513-0390 ; Advanced Theory and Simulations ; https://hal.science/hal-04206515 ; Advanced Theory and Simulations, 2023, Volume 6 (Issue 12), pp.2300369. ⟨10.1002/adts.202300369⟩

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Report

Various Modeling Applied to the Field of Microelectronics and Nanotechnology ; Diverses Modélisations Appliquées au Champs de la Microélectronique et des Nanotechnologies

Authors : Krzeminski, Christophe;

Subjects: Procédés; Nanotechnologies; Modelisation

Source: https://hal.science/hal-04174371 ; 2023.

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Dissertation/ Thesis

Design and fabrication of a normally-off vertical power transistor based on GaN nanowires ; Conception et fabrication d'un transistor de puissance à architecture verticale de type normally-off à base d'un réseau de nanofils de GaN

Authors : Benjelloun, Mohammed;

Subjects: Micro-fabrication; Nanowire; Power applications

Source: https://theses.hal.science/tel-04115836 ; Micro et nanotechnologies/Microélectronique. Université Paris-Saclay; Université de Sherbrooke (Québec, Canada), 2023. Français. ⟨NNT :

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Dissertation/ Thesis

III-V-on-Si nanowire-based solar cells for tandem applications ; Cellules solaires à base de nanofils III-V sur Si pour des applications tandem

Authors : Tong, Capucine;

Subjects: Photovoltaics; III-V; Nanowires

Source: https://theses.hal.science/tel-04194165 ; Micro and nanotechnologies/Microelectronics. Université Paris-Saclay, 2023. English. ⟨NNT : 2023UPAST044⟩.

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Dissertation/ Thesis

Modeling of silicon quantum bits ; Modélisation de bit quantique en technologie de silicium

Authors : Shalak, Baker;

Subjects: Physics; Material science; Quantum mechanics

Source: https://theses.hal.science/tel-04353561 ; Micro and nanotechnologies/Microelectronics. Université de Lille, 2023. English. ⟨NNT : 2023ULILN014⟩.

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Dissertation/ Thesis

Characterization and modelling of MOS transistors from advanced technologies (FDSOI, nanowire, GaN HEMT, LTPS…) ; Caractérisation et modélisation des composants MOS des technologies avancées (FDSOI, nanofil, GaN HEMT, LTPS…)

Authors : Kim, Donghyun;

Subjects: Charactertization; Microelectronics; Mosfet

Source: https://theses.hal.science/tel-04531810 ; Micro and nanotechnologies/Microelectronics. Université Grenoble Alpes [2020-.]; Koryŏ taehakkyo. Asea munje yŏn’guso (Séoul, Corée S.), 2023.

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Academic Journal

Low-frequency noise in quasi-ballistic monolithic Al–Ge–Al nanowire field effect transistors

Authors : Behrle, R.; Sistani, M.; Lugstein, A. ...

Subjects: [SPI.TRON]Engineering Sciences [physics]/Electronics; [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

Source: ISSN: 0003-6951.

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نتائج البحث

فلترة النتائج

Memristive Control of Plasmon-Mediated Nonlinear Photoluminescence in Au Nanowires

Drain Current Variability in 2-levels Stacked Nanowire Gate All Around P-type Field Effect Transistors

Evidence of Trapping and Electrothermal Effects in Vertical Junctionless Nanowire Transistors

Piezo‐Semiconductor Coupled Model for the Simulation of Zinc Oxide 1–3 Piezo‐Composite

Various Modeling Applied to the Field of Microelectronics and Nanotechnology ; Diverses Modélisations Appliquées au Champs de la Microélectronique et des Nanotechnologies

Design and fabrication of a normally-off vertical power transistor based on GaN nanowires ; Conception et fabrication d'un transistor de puissance à architecture verticale de type normally-off à base d'un réseau de nanofils de GaN

III-V-on-Si nanowire-based solar cells for tandem applications ; Cellules solaires à base de nanofils III-V sur Si pour des applications tandem

Modeling of silicon quantum bits ; Modélisation de bit quantique en technologie de silicium

Characterization and modelling of MOS transistors from advanced technologies (FDSOI, nanowire, GaN HEMT, LTPS…) ; Caractérisation et modélisation des composants MOS des technologies avancées (FDSOI, nanofil, GaN HEMT, LTPS…)

Low-frequency noise in quasi-ballistic monolithic Al–Ge–Al nanowire field effect transistors

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