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  • 1-10 of  80 نتائج ل ""In-Memory Computing""

فلترة النتائج

Subject : [spi.meca.stru]engineering sciences [physics]/mechanics [physics.med-ph]/structural mechanics [physics.class-ph] Subject : [spi.nano]engineering sciences [physics]/micro and nanotechnologies/microelectronics Subject : selectivity Subject : test فلترة بواسطة : موضوع
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Conference

Analysis of Resistive-Open Defects on a Foundry 8T SRAM-based IMC Architecture

Subjects: In-Memory Computing; 8T SRAM cell; Resistiveopen defectLyon; France

  • Source: 17e Colloque National du GDR SoC²https://hal-lirmm.ccsd.cnrs.fr/lirmm-0456568817e Colloque National du GDR SoC², Jun 2023, Lyon, France

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Conference

Intra-cell Resistive-Open Defect Analysis on a Foundry 8T SRAM-based IMC Architecture

Subjects: In-Memory Computing; 8T SRAM cell; Resistive-open defectVenise; Italy

  • Source: ETS 2023 - 28th IEEE European Test Symposium ; https://hal.science/hal-04164663 ; ETS 2023 - 28th IEEE European Test Symposium, May 2023,

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Conference

Intra-cell Resistive-Open Defect Analysis on a Foundry 8T SRAM-based IMC Architecture

Subjects: In-Memory Computing; 8T SRAM cell; Resistive-open defectVenise; Italy

  • Source: ETS 2023 - 28th IEEE European Test Symposium ; https://hal.science/hal-04164663 ; ETS 2023 - 28th IEEE European Test Symposium, May 2023,

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Conference

Intra-cell Resistive-Open Defect Analysis on a Foundry 8T SRAM-based IMC Architecture

Subjects: In-Memory Computing; 8T SRAM cell; Resistive-open defectVenise; Italy

  • Source: ETS 2023 - 28th IEEE European Test Symposium ; https://hal.science/hal-04164663 ; ETS 2023 - 28th IEEE European Test Symposium, May 2023,

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Conference

Intra-cell Resistive-Open Defect Analysis on a Foundry 8T SRAM-based IMC Architecture

Subjects: In-Memory Computing; 8T SRAM cell; Resistive-open defectVenise; Italy

  • Source: ETS 2023 - 28th IEEE European Test Symposium ; https://hal.science/hal-04164663 ; ETS 2023 - 28th IEEE European Test Symposium, May 2023,

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Academic Journal

Analysis of resistive defects on a foundry 8T SRAM-based IMC architecture

Subjects: In-Memory Computing; 8T SRAM cell; Resistive defect analysis

  • Source: ISSN: 0026-2714.

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Academic Journal

Side Channel and Fault Analyses on Memristor-Based Logic In-Memory

Subjects: side-channel analysis; in-memory computing; logic-in-memory

  • Source: ISSN: 2168-2356 ; IEEE Design & Test ; https://hal.science/hal-04252272 ; IEEE Design & Test, 2023,

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Academic Journal

Analysis of resistive defects on a foundry 8T SRAM-based IMC architecture

Subjects: In-Memory Computing; 8T SRAM cell; Resistive defect analysis

  • Source: ISSN: 0026-2714.

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Academic Journal

Analysis of resistive defects on a foundry 8T SRAM-based IMC architecture

Subjects: In-Memory Computing; 8T SRAM cell; Resistive defect analysis

  • Source: ISSN: 0026-2714.

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Academic Journal

Side Channel and Fault Analyses on Memristor-Based Logic In-Memory

Subjects: side-channel analysis; in-memory computing; logic-in-memory

  • Source: ISSN: 2168-2356 ; IEEE Design & Test ; https://hal.science/hal-04252272 ; IEEE Design & Test, In press,

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  • 1-10 of  80 نتائج ل ""In-Memory Computing""