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  • 1-10 of  100 نتائج ل ""Radiation Effects""

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Subject : [spi.meca.stru]engineering sciences [physics]/mechanics [physics.med-ph]/structural mechanics [physics.class-ph] Subject : [spi.nano]engineering sciences [physics]/micro and nanotechnologies/microelectronics Subject : neural stimulation فلترة بواسطة : موضوع
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Book

Modeling of Diffusion-Collection Mechanisms in Semiconductor Devices Submitted to Ionizing Radiation

Subjects: complementary metal-oxide semiconductor (CMOS); critical charge; diffusion-collection

  • Source: Advances in Semiconductor Physics and Devices ; https://hal.science/hal-04400965 ; Advances in Semiconductor Physics and Devices, IntechOpen, 2024, ⟨10.5772/intechopen.1003991⟩

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Book

Modeling of Diffusion-Collection Mechanisms in Semiconductor Devices Submitted to Ionizing Radiation

Subjects: complementary metal-oxide semiconductor (CMOS); critical charge; diffusion-collection

  • Source: Advances in Semiconductor Physics and Devices ; https://hal.science/hal-04400965 ; Advances in Semiconductor Physics and Devices, IntechOpen, 2024, ⟨10.5772/intechopen.1003991⟩

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Book

Modeling of Diffusion-Collection Mechanisms in Semiconductor Devices Submitted to Ionizing Radiation

Subjects: complementary metal-oxide semiconductor (CMOS); critical charge; diffusion-collection

  • Source: Advances in Semiconductor Physics and Devices ; https://hal.science/hal-04400965 ; Advances in Semiconductor Physics and Devices, IntechOpen, 2024, ⟨10.5772/intechopen.1003991⟩

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Book

Modeling of Diffusion-Collection Mechanisms in Semiconductor Devices Submitted to Ionizing Radiation

Subjects: complementary metal-oxide semiconductor (CMOS); critical charge; diffusion-collection

  • Source: Advances in Semiconductor Physics and Devices ; https://hal.science/hal-04400965 ; Advances in Semiconductor Physics and Devices, IntechOpen, 2024, ⟨10.5772/intechopen.1003991⟩

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Academic Journal

Comparative Radiation Response of GaN and Ga2O3 Exposed to Ground-Level Neutrons

Subjects: gallium oxide; nuclear reactions; Geant4

  • Source: ISSN: 2073-4352 ; Crystals ; https://hal.science/hal-04420501 ; Crystals, 2024, 14 (2), pp.128. ⟨10.3390/cryst14020128⟩.

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Academic Journal

Multi-scale, Multi-physics Modeling and Simulation of Single Event Effects in Digital Electronics: from Particles to Systems

Subjects: circuit simulation; compact models; device modeling and simulation

  • Source: ISSN: 0018-9499.

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Academic Journal

Comparative Radiation Response of GaN and Ga2O3 Exposed to Ground-Level Neutrons

Subjects: gallium oxide; nuclear reactions; Geant4

  • Source: ISSN: 2073-4352 ; Crystals ; https://hal.science/hal-04420501 ; Crystals, 2024, 14 (2), pp.128. ⟨10.3390/cryst14020128⟩.

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Academic Journal

Multi-scale, Multi-physics Modeling and Simulation of Single Event Effects in Digital Electronics: from Particles to Systems

Subjects: circuit simulation; compact models; device modeling and simulation

  • Source: ISSN: 0018-9499.

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Academic Journal

Multi-scale, Multi-physics Modeling and Simulation of Single Event Effects in Digital Electronics: from Particles to Systems

Subjects: circuit simulation; compact models; device modeling and simulation

  • Source: ISSN: 0018-9499.

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Academic Journal

Multi-scale, Multi-physics Modeling and Simulation of Single Event Effects in Digital Electronics: from Particles to Systems

Subjects: circuit simulation; compact models; device modeling and simulation

  • Source: ISSN: 0018-9499.

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  • 1-10 of  100 نتائج ل ""Radiation Effects""