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  • 1-10 of  57 نتائج ل ""Neutrons""

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Subject : [spi.elec]engineering sciences [physics]/electromagnetism Subject : [spi.meca.stru]engineering sciences [physics]/mechanics [physics.med-ph]/structural mechanics [physics.class-ph] Subject : [spi.nano]engineering sciences [physics]/micro and nanotechnologies/microelectronics Subject : fault injection فلترة بواسطة : موضوع
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Academic Journal

Comparative Radiation Response of GaN and Ga2O3 Exposed to Ground-Level Neutrons

Subjects: gallium oxide; nuclear reactions; Geant4

  • Source: ISSN: 2073-4352 ; Crystals ; https://hal.science/hal-04420501 ; Crystals, 2024, 14 (2), pp.128. ⟨10.3390/cryst14020128⟩.

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Academic Journal

Comparative Radiation Response of GaN and Ga2O3 Exposed to Ground-Level Neutrons

Subjects: gallium oxide; nuclear reactions; Geant4

  • Source: ISSN: 2073-4352 ; Crystals ; https://hal.science/hal-04420501 ; Crystals, 2024, 14 (2), pp.128. ⟨10.3390/cryst14020128⟩.

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Academic Journal

Comparative Radiation Response of GaN and Ga2O3 Exposed to Ground-Level Neutrons

Subjects: gallium oxide; nuclear reactions; Geant4

  • Source: ISSN: 2073-4352 ; Crystals ; https://hal.science/hal-04420501 ; Crystals, 2024, 14 (2), pp.128. ⟨10.3390/cryst14020128⟩.

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Academic Journal

Basic Mechanisms of Single-Event Occurrence in Silicon Carbide Semiconductor under Terrestrial Atmospheric Neutron Irradiation

Subjects: terrestrial cosmic rays; atmospheric neutrons; neutron–semiconductor interactions

  • Source: ISSN: 2079-9292 ; Electronics ; https://amu.hal.science/hal-04265835 ; Electronics, 2023, 12 (21), pp.4468. ⟨10.3390/electronics12214468⟩.

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Academic Journal

Basic Mechanisms of Single-Event Occurrence in Silicon Carbide Semiconductor under Terrestrial Atmospheric Neutron Irradiation

Subjects: terrestrial cosmic rays; atmospheric neutrons; neutron–semiconductor interactions

  • Source: ISSN: 2079-9292 ; Electronics ; https://amu.hal.science/hal-04265835 ; Electronics, 2023, 12 (21), pp.4468. ⟨10.3390/electronics12214468⟩.

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Academic Journal

Enhancing Fault Awareness and Reliability of a Fault-Tolerant RISC-V System-on-Chip

Subjects: RISC-V; System-on-Chip; Dependability

  • Source: ISSN: 2079-9292 ; Electronics ; https://hal.science/hal-04120525 ; Electronics, 2023, 12 (12), pp.2557. ⟨10.3390/electronics12122557⟩.

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Academic Journal

Basic Mechanisms of Single-Event Occurrence in Silicon Carbide Semiconductor under Terrestrial Atmospheric Neutron Irradiation

Subjects: terrestrial cosmic rays; atmospheric neutrons; neutron–semiconductor interactions

  • Source: ISSN: 2079-9292 ; Electronics ; https://amu.hal.science/hal-04265835 ; Electronics, 2023, 12 (21), pp.4468. ⟨10.3390/electronics12214468⟩.

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Academic Journal

Enhancing Fault Awareness and Reliability of a Fault-Tolerant RISC-V System-on-Chip

Subjects: RISC-V; System-on-Chip; Dependability

  • Source: ISSN: 2079-9292 ; Electronics ; https://hal.science/hal-04120525 ; Electronics, 2023, 12 (12), pp.2557. ⟨10.3390/electronics12122557⟩.

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Academic Journal

Basic Mechanisms of Single-Event Occurrence in Silicon Carbide Semiconductor under Terrestrial Atmospheric Neutron Irradiation

Subjects: terrestrial cosmic rays; atmospheric neutrons; neutron–semiconductor interactions

  • Source: ISSN: 2079-9292 ; Electronics ; https://amu.hal.science/hal-04265835 ; Electronics, 2023, 12 (21), pp.4468. ⟨10.3390/electronics12214468⟩.

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Academic Journal

Enhancing Fault Awareness and Reliability of a Fault-Tolerant RISC-V System-on-Chip

Subjects: RISC-V; System-on-Chip; Dependability

  • Source: ISSN: 2079-9292 ; Electronics ; https://hal.science/hal-04120525 ; Electronics, 2023, 12 (12), pp.2557. ⟨10.3390/electronics12122557⟩.

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  • 1-10 of  57 نتائج ل ""Neutrons""