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Gallium Nitride (GaN) plasma etch for high efficiency µLED applications ; Gravure Plasma du Nitrure de Gallium pour la réalisation de micro LEDs à hautes performances

• Authors : Catala, Antoine;

Subjects: Gallium Nitride; Dry etch; MicroLED

• Source: https://theses.hal.science/tel-04709947 ; Micro et nanotechnologies/Microélectronique. Université Grenoble Alpes [2020-.], 2024. Français. ⟨NNT : 2024GRALT041⟩.

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Robustness and Stability of Gallium Nitride Transistors in Dynamic Power Switching

• Authors : Song, Qihao;

Subjects: Power Electronics; Power Semiconductor Devices; Wide bandgap

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Design and analysis of an integrated pulse modulated s-band power amplifier in gallium nitride process

• Authors : Sedlock, Steve [Kansas State Univ., Manhattan, KS (United States)]

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Selective excitation of the yellow and blue luminescence in n- and p-doped Gallium Nitride

• Authors : Colton, John [Univ. of California, Berkeley, CA (United States)]

• Source: Other Information: TH: Thesis (Ph.D.); Submitted to Univ. of California, Berkeley, CA (US); PBD: 31 Dec 2000

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Junction Based Gallium Nitride Power Devices

• Authors : Ma, Yunwei;

Subjects: Power electronics; power semiconductor devices; wide bandgap

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Robustness of Gallium Nitride Power Devices

• Authors : Zhang, Ruizhe;

Subjects: power electronics; power semiconductor devices; wide bandgap

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Gallium Nitride (GaN) specific mechanical phenomena and their influence on reliability in power HEMT operation

• Authors : Pribahsnik, Florian Peter; Lindemann, Florian Peter

Subjects: ddc:620; ddc:621; Bauelemente der Elektrotechnik

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Packaging of Enhancement-Mode Gallium Nitride High-Electron-Mobility Transistors for High Power Density Applications

• Authors : Lu, Shengchang;

Subjects: Power electronics packaging; gallium nitride high-electron-mobility transistors; parasitic inductance

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Avaliação do uso de semicondutores de nitreto de gálio no estágio de controle de potência de uma luminária LED para iluminação pública ; Evaluation of the use of gallium nitride semiconductors in the power control stage of an LED luminaire for public lighting

• Authors : Barboza, Igor Bertoncello;

Subjects: Transistor de nitreto de gálio; MasterGaN1; Estágio de controle de potência

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Ultra-wideband Gallium Nitride Electronics for Integrated Phase Array Systems

• Authors : Li, Yue; Wang, Yuanxun

Subjects: Electrical engineering

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