نتائج البحث

Activation cross-sections for short-lived reaction products on hafnium isotopes induced by 1 – 20 MeV neutrons.

• Authors : Semkova, Valentina¹ ; Demerdjiev, Anguel¹; Moens, André²

• Source: EPJ Web of Conferences. 5/26/2023, Vol. 284, p1-4. 4p.

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Bridging Large-Signal and Small-Signal Responses of Hafnium-Based Ferroelectric Tunnel Junctions

• Authors : Massarotto, M.; Segatto, M.; Driussi, F. ...

Subjects: Ferroelectric; Hafnium Zirconium Oxide (HZO); Ferroelectric Tunnel Junction (FTJ)

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In-Pile Experiment of a New Hafnium Aluminide Composite Material to Enable Fast Neutron Testing in the Advanced Test Reactor

• Authors : Ban, Heng

• Source: Conference: ICAPP'10,San Diego, CA,06/13/2010,02/17/2010

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The effect of twinning on the work hardening behavior in Hafnium

• Authors : Yablinsky, C [Clarissa]

• Source: Conference: Submitted to: TMS annual meeting, Charlotte, NC, March 14-18, 2004

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Cross Section Measurements and Theoretical Study of the 174,176Hf(n,2n)173,175Hf Reactions.

• Authors : Vlastou, R.¹; Kalamara, A.^1,2,3; Serris, M.⁴

• Source: EPJ Web of Conferences. 5/26/2023, Vol. 284, p1-4. 4p.

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Effect of extrusion parameters on consolidation of tungsten-hafnium and tungsten-steel powders

• Authors : Kapoor, D. [Army Armament Research and Development Engineering Center, Dover, New Jersey (United States)]

• Source: Conference: International mining trade show and 96th annual meeting of the Canadian Institute of Mining, Metallurgy and Petroleum, Toronto, ON (Canada), 1-4 May 1994; Other Information: PBD: [1994]

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Preliminary Design for Thermal/Epithermal eXperiments with Jemima Plates with Polyethylene and Hafnium

• Authors : Heinrichs, D

• Source: Conference: Presented at: International Confernece on Nuclear Criticality, Charlotte, NC, United States, Sep 13 - Sep 17, 2015

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Next Generation Ferroelectric Memories enabled by Hafnium Oxide

• Authors : Mikolajick, T.; Schroeder, U.; Lomenzo, P. D.

Subjects: Kondensatoren; ferroelektrischer Speicher; Feldeffekttransistoren

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Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories

• Authors : Mikolajick, T.; Mulaosmanovic, H.; Hoffmann, M.

Subjects: CMOS-Speicherschaltungen; ferroelektrische Materialien; ferroelektrische Speicherung

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Dynamic Negative Bias Stress Instability Effects in Hafnium Silicon Oxynitride and Silicon Dioxide.

• Authors : Kambour, Kenneth

• Source: Conference: Proposed for presentation at the Electrochemical Society meeting held May 1-6, 2011 in Montreal, Canada.

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