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Energy Production and Performance of Polycrystalline Silicon Technology Photovoltaic Modules in the Field: Preprint

• Authors : del Cueto, J

• Source: Conference: Presented at the NCPV Program Review Meeting, Lakewood, CO (US), 10/14/2001--10/17/2001; Other Information: PBD: 1 Oct 2001

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On properties of boundaries and electron conductivity in mesoscopic polycrystalline silicon films for memory devices

• Authors : Nagaev, K [Russian Academy of Sciences, Moscow (Russian Federation). Inst. of Radio-engineering and Electronics]

• Source: Conference: 2. international workshop on surfaces and interfaces of mesoscopic devices, Kaanapalli, HI (United States), 7-12 Dec 1997; Other Information: PBD: Feb 1998

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The effects of spatial location of defect states on the switching characteristics of amorphous and polycrystalline silicon thin film transistors: A numerical simulation using AMPS 2-D

• Authors : Kalkan, A [Pennsylvania State Univ., University Park, PA (United States). Electronic Materials and Processing Research Lab.]

• Source: Conference: 1994 international display research conference,Monterey, CA (United States),10-13 Oct 1994; Other Information: PBD: [1994]

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Characterization of on-chip polycrystalline silicon photoconductors

• Authors : Hammond, R

• Source: Conference: International conference on high-speed electronics, Stockholm, Sweden, 7 Aug 1986; Other Information: Portions of this document are illegible in microfiche products

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Opportunities and challenges in the use of heavily doped polycrystalline silicon as a thermoelectric material. An experimental study

• Authors : NARDUCCI, DARIO; SELEZNEVA, EKATERINA; ROMANO, ELISABETTA ...

Subjects: Seebeck effect; silicon; thermoelectricity

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Closed-Form Solutions and Parameterization of the Problem of Current-Voltage Performance of Polycrystalline Photovoltaic Modules Deployed at Fixed Latitude Tilt

• Authors : del Cueto, J

• Source: Conference: Prepared for the 31st IEEE Photovoltaics Specialists Conference and Exhibition, Lake Buena Vista, FL (US), 01/03/2005--01/07/2005; Other Information: PBD: 1 Feb 2005

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APIVT Epitaxial Growth on Zone-Melt Recrystallized Silicon: Preprint

• Authors : Ciszek, T

• Source: Conference: To be presented at the 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes, 10-13 August 2003, Vail, Colorado

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Material Improvements and Device Processing on APIVT-Grown Poly-Si Thin Layers

• Authors : Ciszek, T

• Source: Conference: Presented at the National Center for Photovoltaics and Solar Program Review Meeting, 24-26 March 2003, Denver, Colorado

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APIVT-Grown Silicon Thin Layers and PV Devices: Preprint

• Authors : Landry, M

• Source: Conference: Conference title not supplied, Conference location not supplied, Conference dates not supplied; Other Information: PBD: 1 May 2002; Other Information: Prepared for the 29th IEEE PV

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Applications of laser annealing and laser-induced diffusion to photovoltaic conversion

• Authors : Wood, R

• Source: Conference: High efficiency concentrator and III-V compound contractors in depth review meeting, Raleigh, NC, USA, 31 Mar 1981

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