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Molecular Dynamics Simulation of Nanomachining Mechanism between Monocrystalline and Polycrystalline Silicon Carbide.

• Authors : Liu, Bing¹; Yang, Haijie¹; Xu, Zongwei²

• Source: Advanced Theory & Simulations. Aug2021, Vol. 4 Issue 8, p1-9. 9p.

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Effect of Y2O3 additive on nitridation of diamond wire silicon cutting waste.

• Authors : Wang, Lijuan^1,2 (AUTHOR); Zhuang, Yanxin^1,2 (AUTHOR) ; Xing, Pengfei³ (AUTHOR)

• Source: International Journal of Applied Ceramic Technology. Mar2023, Vol. 20 Issue 2, p1225-1234. 10p.

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Validated Prediction of the Strength Size Effect in Polycrystalline Silicon Using the Three-Parameter Weibull Function.

• Authors : Saleh, Mohamed E.¹; Beuth, Jack L.¹; Boer, Maarten P.¹

• Source: Journal of the American Ceramic Society. Dec2014, Vol. 97 Issue 12, p3982-3990. 9p.

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Modeling of Probabilistic Failure of Polycrystalline Silicon MEMS Structures.

• Authors : Le, Jia‐Liang¹; Ballarini, Roberto²; Zhu, Zhiren¹

• Source: Journal of the American Ceramic Society. Jun2015, Vol. 98 Issue 6, p1685-1697. 13p.

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Luminescent properties of doped amorphous and polycrystalline Y3Al5O12‐Al2O3.

• Authors : Zheng, Guojun¹ (AUTHOR); Wu, Jianhong^1,2 (AUTHOR); Xu, Zhousu³ (AUTHOR)

• Source: Journal of the American Ceramic Society. Jul2021, Vol. 104 Issue 7, p3139-3148. 10p. 1 Chart, 6 Graphs.

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Label‐Free Metal‐Oxide Transistor Biosensors for Metabolite Detection in Human Saliva.

• Authors : Sharma, Abhinav; Faber, Hendrik; AlGhamdi, Wejdan S.

Subjects: SALIVA; TRANSISTORS; BIOSENSORS

• Source: Advanced Science; 7/17/2024, Vol. 11 Issue 27, p1-10, 10p

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Proposal and experimental study of a high-precision polycrystalline-silicon film resistor with a quasi-double-layer structure.

• Authors : Shimamoto, Hiromi¹; Ohnishi, Kazuhiro²; Shiba, Takeo²

• Source: Electronics & Communications in Japan, Part 2: Electronics. Jul2004, Vol. 87 Issue 7, p9-17. 9p.

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Scratch Fracture of Polycrystalline Silicon Wafers.

• Authors : Borrero‐López, Oscar^1,2; Vodenitcharova, Tania²; Quadir, Md Zakaria²

• Source: Journal of the American Ceramic Society. Aug2015, Vol. 98 Issue 8, p2587-2594. 8p.

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High-Performance Polycrystalline Silicon TFTs using Self- Aligned Grain Boundary Control Technique.

• Authors : Shinohara, Toshiro¹; Tarui, Yasuo¹

• Source: Electronics & Communications in Japan, Part 2: Electronics. Oct93, Vol. 76 Issue 10, p99-107. 9p.

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Polycrystalline-Silicon TFTs Fabricated at Low Temperature Using Ion Doping Technique.

• Authors : Yoshinouchi, Atsushi¹; Oda, Akihiro¹; Itoh, Masataka¹

• Source: Electronics & Communications in Japan, Part 2: Electronics. Oct93, Vol. 76 Issue 10, p108-115. 8p.

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