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Publisher : wiley-blackwell فلترة بواسطة : مصطلح موضوعي

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Academic Journal

High Efficient Solar Cell Based on Heterostructure Constructed by Graphene and GaAs Quantum Wells.

Authors : Yu, Xutao¹ (AUTHOR); Dai, Yue¹ (AUTHOR); Lu, Yanghua¹ (AUTHOR)

Source: Advanced Science. Jan2023, Vol. 10 Issue 2, p1-8. 8p.

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Academic Journal

An empirical study on the materiality calculation at financial statements level.

Authors : Azad, Abdollah¹ (AUTHOR) ; Salehi, Mahdi¹ (AUTHOR) ; Lari Dashtbayaz, Mahmoud¹ (AUTHOR)

Source: Journal of Public Affairs (14723891). Nov2022, Vol. 22 Issue 4, p1-9. 9p.

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Academic Journal

A complete small‐signal model of GaAs dual‐gate HEMT.

Authors : Huang, Yuhan¹ (AUTHOR); Liu, Jun¹ (AUTHOR) ; Chen, Zhanfei¹ (AUTHOR)

Source: International Journal of Numerical Modelling. Sep2022, Vol. 35 Issue 5, p1-10. 10p.

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Academic Journal

Analytic description of nanowires II: morphing of regular cross sections for zincblende‐ and diamond‐structures to match arbitrary shapes.

Authors : König, Dirk^1,2,3 (AUTHOR) ; Smith, Sean C.¹ (AUTHOR)

Source: Acta Crystallographica Section B: Structural Science, Crystal Engineering & Materials. Aug2022, Vol. 78 Issue 4, p643-664. 22p.

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Academic Journal

Measurement‐based analysis of GaAs HEMT technologies: Multilayer D‐H pseudomorphic HEMT versus conventional S‐H HEMT.

Authors : Alim, Mohammad A.¹ (AUTHOR) ; Ali, Mayahsa M.² (AUTHOR); Crupi, Giovanni³ (AUTHOR)

Source: International Journal of Numerical Modelling. Aug/Sep2021, Vol. 34 Issue 5, p1-14. 14p.

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Academic Journal

A novel artificial neural network‐based nonlinear output current model for GaAs pHEMT with accurate high‐order derivatives.

Authors : Li, Meng‐Jie¹ (AUTHOR); Li, Zhao¹ (AUTHOR) ; Wang, Lu‐Lu² (AUTHOR)

Source: International Journal of Numerical Modelling. Sep/Oct2020, Vol. 33 Issue 5, p1-11. 11p.

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Academic Journal

Equivalent‐circuit–based modeling of the scattering and noise parameters for multi‐finger GaAs pHEMTs.

Authors : Caddemi, Alina¹ (AUTHOR); Cardillo, Emanuele¹ (AUTHOR); Crupi, Giovanni² (AUTHOR)

Source: International Journal of Numerical Modelling. May/Jun2020, Vol. 33 Issue 3, p1-7. 7p.

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Academic Journal

An ultra‐wideband distributed amplifier MMICs based on 0.15‐um GaAs pHEMT technology.

Authors : Yang, Jie¹ (AUTHOR); Wang, Lei¹ (AUTHOR) ; Li, Lang¹ (AUTHOR)

Source: International Journal of Numerical Modelling. May/Jun2020, Vol. 33 Issue 3, p1-6. 6p.

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Academic Journal

Analysis of nonlinear large signal intrinsic elements for InGaP/GaAs HBT based on Gummel‐Poon model.

Authors : Hu, Shanwen¹ (AUTHOR) ; Xu, Kaikai² (AUTHOR); Yu, Shu¹ (AUTHOR)

Source: International Journal of Numerical Modelling. May/Jun2020, Vol. 33 Issue 3, p1-13. 13p.

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Academic Journal

Arrival timing diagnostics at a soft X‐ray free‐electron laser beamline of SACLA BL1.

Authors : Owada, Shigeki^1,2 (AUTHOR) ; Nakajima, Kyo^1,2 (AUTHOR); Togashi, Tadashi^1,2 (AUTHOR)

Source: Journal of Synchrotron Radiation. May2019, Vol. 26 Issue 3, p887-890. 4p.

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نتائج البحث

فلترة النتائج

High Efficient Solar Cell Based on Heterostructure Constructed by Graphene and GaAs Quantum Wells.

An empirical study on the materiality calculation at financial statements level.

A complete small‐signal model of GaAs dual‐gate HEMT.

Analytic description of nanowires II: morphing of regular cross sections for zincblende‐ and diamond‐structures to match arbitrary shapes.

Measurement‐based analysis of GaAs HEMT technologies: Multilayer D‐H pseudomorphic HEMT versus conventional S‐H HEMT.

A novel artificial neural network‐based nonlinear output current model for GaAs pHEMT with accurate high‐order derivatives.

Equivalent‐circuit–based modeling of the scattering and noise parameters for multi‐finger GaAs pHEMTs.

An ultra‐wideband distributed amplifier MMICs based on 0.15‐um GaAs pHEMT technology.

Analysis of nonlinear large signal intrinsic elements for InGaP/GaAs HBT based on Gummel‐Poon model.

Arrival timing diagnostics at a soft X‐ray free‐electron laser beamline of SACLA BL1.

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