نتائج البحث

Electrolyte Effect on Photoetching of Gallium Nitride.

• Authors : Liang, Huiqiang^1,2; Wei, Zhenghao^1,2; Fang, Jiongchong^1,2

• Source: Nanomanufacturing & Metrology. 3/6/2024, Vol. 7 Issue 1, p1-14. 14p.

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Performance analysis of gallium nitride-based DH-HEMT with polarization-graded AlGaN back-barrier layer.

• Authors : Kalita, Sanjib¹ (AUTHOR); Awadhiya, Bhaskar² (AUTHOR) ; Changmai, Papul³ (AUTHOR)

• Source: Applied Physics B: Lasers & Optics. Jun2023, Vol. 129 Issue 6, p1-9. 9p.

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Intrinsic and Extrinsic Thermal Conductivity of Gallium Nitride and Silicon Carbide

• Authors : Lu, Yang; Cahill, David; Zheng, Qiye

Subjects: Book chapter

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Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer.

• Authors : Mansor, Marwan¹ (AUTHOR) ; Norhaniza, Rizuan¹ (AUTHOR); Shuhaimi, Ahmad¹ (AUTHOR)

• Source: Scientific Reports. 5/31/2023, Vol. 13 Issue 1, p1-8. 8p.

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Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars.

• Authors : Sato, Shin-ichiro^1,2 (AUTHOR) ; Li, Shuo² (AUTHOR); Greentree, Andrew D.² (AUTHOR)

• Source: Scientific Reports. 12/8/2022, Vol. 12 Issue 1, p1-11. 11p.

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Gallium nitride wafer slicing by a sub-nanosecond laser: effect of pulse energy and laser shot spacing.

• Authors : Sena, Hadi¹ (AUTHOR) ; Tanaka, Atsushi^1,2 (AUTHOR); Wani, Yotaro³ (AUTHOR)

• Source: Applied Physics A: Materials Science & Processing. Sep2021, Vol. 127 Issue 9, p1-8. 8p. 3 Color Photographs, 3 Black and White Photographs.

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A low switching loss GaN trench MOSFET design utilizing a triple-shield structure.

• Authors : Qiu, Yihang¹ (AUTHOR); Wei, Li² (AUTHOR)

• Source: Scientific Reports. 1/2/2025, Vol. 15 Issue 1, p1-11. 11p.

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Morphology of the Surface of Semipolar GaN Layers during Epitaxy on a Nano-Patterned Si Substrate.

• Authors : Bessolov, V. N.¹ (AUTHOR) ; Konenkova, E. V.¹ (AUTHOR); Orlova, T. A.¹ (AUTHOR)

• Source: Technical Physics. Nov2023, Vol. 68 Issue 11, p395-398. 4p.

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Humidity sensor based on Gallium Nitride for real time monitoring applications.

• Authors : Furqan, Chaudhry Muhammad^1,2 (AUTHOR); Khan, Muhammad Umair^2,3 (AUTHOR); Awais, Muhammad⁴ (AUTHOR)

• Source: Scientific Reports. 5/27/2021, Vol. 11 Issue 1, p1-14. 14p.

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High-performance gallium nitride dielectric metalenses for imaging in the visible.

• Authors : Chen, Meng-Hsin¹; Chou, Wei-Ning²; Su, Vin-Cent²

• Source: Scientific Reports. 3/22/2021, Vol. 11 Issue 1, p1-8. 8p.

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