نتائج البحث

Optical Studies of Undoped and Doped Wide Bandgap Carbide and Nitride Semiconductors

• Authors : W.J. Moore; J.A. Freitas

Subjects: Physics; business.industry; Band gap

• Source: Brazilian Journal of Physics, Volume: 28, Issue: 1, Pages: 12-18, Published: MAR 1998Brazilian Journal of Physics v.28 n.1 1998Brazilian Journal of PhysicsSociedade Brasileira de

تفاصيل العنوان

Optical Studies of Undoped and Doped Wide Bandgap Carbide and Nitride Semiconductors

• Authors : Freitas, Jr., J.A.; Moore, W.J.

• Source: Brazilian Journal of Physics. March 1998 28(1)

تفاصيل العنوان

Analysis of Er3+ incorporation in SnO2 by optical investigation

• Authors : Morais, Evandro A. de; Scalvi, Luis V. A.; Martins, Márcio R.

Subjects: Er3+ emission; SnO2; Photoluminescence spectra

• Source: Brazilian Journal of Physics. June 2006 36(2a)

تفاصيل العنوان

Analysis of Er3+ incorporation in SnO2 by optical investigation

• Authors : E. A. Morais; Marcio Martins; Sidney José Lima Ribeiro ...

Subjects: Physics; Photoluminescence; Band gap

• Source: SciELORepositório Institucional da UNESPUniversidade Estadual Paulista (UNESP)instacron:UNESPBrazilian Journal of Physics, Volume: 36, Issue: 2a, Pages: 270-273, Published:

تفاصيل العنوان