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Statistical analysis of vertically stacked nanosheet complementary FET based on polycrystalline silicon with multiple grain boundaries

• Authors : Jin Park; Sang Ho Lee; So Ra Jeon

Subjects: Polycrystalline silicon; complementary field-effect transistor (CFET); Grain boundary

• Source: Results in Physics, Vol 63, Iss , Pp 107873- (2024)

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Degradation analysis of polycrystalline silicon modules from different manufacturers under the same climatic conditions

• Authors : Samuel Gyamfi; Bernard Aboagye; Forson Peprah

Subjects: Degradation rate; Polycrystalline silicon modules; Different manufacturers

• Source: Energy Conversion and Management: X, Vol 20, Iss , Pp 100403- (2023)

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Individual efficiencies of a polycrystalline silicon PV cell versus temperature

• Authors : Adama Ouédraogo; Bernard Zouma; Emmanuel Ouédraogo

Subjects: Polycrystalline silicon PV cell; Absorption efficiency; Thermalization efficiency

• Source: Results in Optics, Vol 4, Iss , Pp 100101- (2021)

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Elucidation of the Density of States for Polycrystalline Silicon Vertical Thin-Film Transistors

• Authors : Zhang, Peng; Jacques, Emmanuel; Rogel, Regis ...

Subjects: Access resistance; density of states (DOS); intrinsic mobility

• Source: ISSN: 0018-9383 ; IEEE Transactions on Electron Devices ; https://hal.science/hal-03690764 ; IEEE Transactions on Electron Devices, 2022, 69 (6), pp.3175-3180. ⟨10.1109/TED.2022.3167938⟩.

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Elucidation of electric characteristics for P and N type polycrystalline silicon vertical thin film transistors

• Authors : Zhang, Peng; Jacques, Emmanuel; Rogel, Regis ...

Subjects: polycrystalline silicon; vertical thin film transistor; complementary circuits

• Source: ISSN: 0022-3727 ; EISSN: 1361-6463.

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In-depth analysis of electrical characteristics for polycrystalline silicon vertical thin film transistors

• Authors : Zhang, P.; Jacques, Emmanuel; Rogel, R. ...

Subjects: Density of states; Grain boundary barrier; Polycrystalline silicon

• Source: ISSN: 0038-1101 ; Solid-State Electronics ; https://hal.science/hal-03195846 ; Solid-State Electronics, 2021, 178, pp.107981. ⟨10.1016/j.sse.2021.107981⟩.

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Fracture of solar-grade anisotropic polycrystalline Silicon: A combined phase field–cohesive zone model approach

• Authors : Paggi, Marco; Corrado, Mauro; Reinoso Cuevas, José Antonio ...

Subjects: Cohesive zone model; Phase field modeling of fracture; Anisotropic elasticity

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Fracture of solar-grade anisotropic polycrystalline Silicon: A combined phase field–cohesive zone model approach

Subjects: Cohesive zone model; Phase field modeling of fracture; Anisotropic elasticity

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Fracture of solar-grade anisotropic polycrystalline Silicon: A combined phase field–cohesive zone model approach

Subjects: Cohesive zone model; Phase field modeling of fracture; Anisotropic elasticity

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Fracture of solar-grade anisotropic polycrystalline Silicon: A combined phase field–cohesive zone model approach

Subjects: Cohesive zone model; Phase field modeling of fracture; Anisotropic elasticity

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