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Conference

Temperature performance of AlGaN/GaN MOS-HEMTs on Si substrates using Gd2O3 as gate dielectric

Subjects: Electrónica; Telecomunicaciones

  • Source: 23th European Workshop on Heterostructures Technology (HETECH 2014) | 23th European Workshop on Heterostructures Technology (HETECH 2014) | 12/10/201 - 15/10/2014 | Giessen, Germany

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  • 1-6 ل  6 نتائج ل ""Leakage currents""