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Publisher : springer nature

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Academic Journal

Study on surface integrity and ductile cutting of PV polycrystalline silicon and wear mechanisms of electroplated diamond wire.

Authors : Costa, Erick Cardoso¹ (AUTHOR) ; dos Santos, Caroline Piesanti¹ (AUTHOR); Carvalho, Vinicius Almeida¹ (AUTHOR)

Source: International Journal of Advanced Manufacturing Technology. Sep2022, Vol. 122 Issue 3/4, p1539-1553. 15p.

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Academic Journal

Polycrystalline silicon PhC cavities for CMOS on-chip integration.

Authors : Iadanza, S.^1,2 (AUTHOR) ; Devarapu, G. C. R.^1,2 (AUTHOR); Blake, A.¹ (AUTHOR)

Source: Scientific Reports. 10/12/2022, Vol. 12 Issue 1, p1-11. 11p.

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Academic Journal

3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary's influence.

Authors : Lee, Sang Ho¹ (AUTHOR); Park, Jin¹ (AUTHOR); Min, So Ra¹ (AUTHOR)

Source: Scientific Reports. 8/24/2022, Vol. 12 Issue 1, p1-8. 8p.

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Academic Journal

Characteristics of Solar Cells Based on Polycrystalline Silicon.

Authors : Abdurakhmanov, B. M.¹ (AUTHOR); Adilov, M. M.¹ (AUTHOR) ; Ashurov, M. Kh.² (AUTHOR)

Source: Doklady Physics. Nov2022, Vol. 67 Issue 11, p439-441. 3p.

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Academic Journal

On the Plasma-Chemical Processing of Finely Dispersed Silicon Monoxide Particles in Argon-Hydrogen Plasma Flows.

Authors : Skryabin, A. S.¹ (AUTHOR) ; Sychev, A. E.² (AUTHOR)

Source: High Temperature. Jun2022, Vol. 60 Issue 3, p300-303. 4p.

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Academic Journal

Hydrostatic pressure effects for controlling the phononic band gap properties in a perfect phononic crystal.

Authors : Mehaney, Ahmed¹ (AUTHOR); Ahmed, Ashour M.² (AUTHOR); Elsayed, Hussein A.¹ (AUTHOR)

Source: Optical & Quantum Electronics. Feb2022, Vol. 54 Issue 2, p1-14. 14p.

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Academic Journal

Application of poly-Si/SiOx passivating contact in x-ray silicon pixel detector.

Authors : Song, Hongyu^1,2 (AUTHOR); Tao, Ke^1,2 (AUTHOR) ; Jia, Rui² (AUTHOR)

Source: Applied Physics A: Materials Science & Processing. 9/1/2022, Vol. 128 Issue 9, p1-8. 8p.

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Academic Journal

On the Structure of Segregations at Special Boundaries of Polycrystalline Substitutional Alloys.

Authors : Vasil'ev, L. S.¹ (AUTHOR) ; Lomaev, I. L.² (AUTHOR); Lomaev, S. L.^1,3 (AUTHOR)

Source: Russian Physics Journal. Feb2022, Vol. 64 Issue 10, p1949-1960. 12p.

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فلترة النتائج

Study on surface integrity and ductile cutting of PV polycrystalline silicon and wear mechanisms of electroplated diamond wire.

Polycrystalline silicon PhC cavities for CMOS on-chip integration.

3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary's influence.

Characteristics of Solar Cells Based on Polycrystalline Silicon.

On the Plasma-Chemical Processing of Finely Dispersed Silicon Monoxide Particles in Argon-Hydrogen Plasma Flows.

Hydrostatic pressure effects for controlling the phononic band gap properties in a perfect phononic crystal.

Application of poly-Si/SiOx passivating contact in x-ray silicon pixel detector.

On the Structure of Segregations at Special Boundaries of Polycrystalline Substitutional Alloys.

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