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Academic Journal

n+ GaAs/AuGeNi-Au Thermocouple-Type RF MEMS Power Sensors Based on Dual Thermal Flow Paths in GaAs MMIC.

Authors : Zhiqiang Zhang¹ ; Xiaoping Liao¹

Source: Sensors (14248220). Jun2017, Vol. 17 Issue 6, p1426. 7p.

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Academic Journal

Synthesis and properties of InAlGaPAs/GaAs heterostructures.

Authors : Alfimova, D.¹; Lunin, L. ; Lunina, M.¹

Source: Inorganic Materials. Dec2017, Vol. 53 Issue 12, p1217-1227. 11p.

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Academic Journal

Metalorganic vapour phase epitaxy of GaAs/AlGaAs nanoheterostructures for a quantum cascade laser.

Authors : Marmalyuk, A. ; Padalitsa, A.¹; Ladugin, M.¹

Source: Inorganic Materials. Sep2017, Vol. 53 Issue 9, p891-895. 5p.

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Academic Journal

Effect of 100 MeV Si ions’ irradiation on Pd/n-GaAs Schottky diodes.

Authors : Sinha, O. P.¹ (AUTHOR)

Source: Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena. Nov-Dec2017, Vol. 172 Issue 11/12, p975-984. 10p.

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Epitaxial low-temperature growth of InGaAs films on GaAs(100) and GaAs(111) A substrates using a metamorphic buffer.

Authors : Galiev, G.¹; Trunkin, I.²; Klimov, E.¹

Source: Crystallography Reports. Nov2017, Vol. 62 Issue 6, p947-954. 8p.

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Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates.

Authors : Galiev, G.¹; Pushkarev, S.¹ ; Buriakov, A.²

Source: Semiconductors. Apr2017, Vol. 51 Issue 4, p503-508. 6p.

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Academic Journal

Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111) A substrates.

Authors : Galiev, G.¹; Klimov, E.¹; Vasiliev, A.

Source: Crystallography Reports. Jan2017, Vol. 62 Issue 1, p82-90. 9p.

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Academic Journal

Transmission electron microscopy of AlGaAs/GaAs quantum cascade laser structures.

Authors : WALTHER, T.^1,2 ; KRYSA, A.B.^2,3

Source: Journal of Microscopy. Dec2017, Vol. 268 Issue 3, p298-304. 7p.

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Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects.

Authors : Zabavichev, I.¹; Obolenskaya, E.¹; Potekhin, A.¹

Source: Semiconductors. Nov2017, Vol. 51 Issue 11, p1435-1438. 4p.

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Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures.

Authors : Nikiforov, V.¹; Abramkin, D.; Shamirzaev, T.

Source: Semiconductors. Nov2017, Vol. 51 Issue 11, p1513-1516. 4p.

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نتائج البحث

فلترة النتائج

n+ GaAs/AuGeNi-Au Thermocouple-Type RF MEMS Power Sensors Based on Dual Thermal Flow Paths in GaAs MMIC.

Synthesis and properties of InAlGaPAs/GaAs heterostructures.

Metalorganic vapour phase epitaxy of GaAs/AlGaAs nanoheterostructures for a quantum cascade laser.

Effect of 100 MeV Si ions’ irradiation on Pd/n-GaAs Schottky diodes.

Epitaxial low-temperature growth of InGaAs films on GaAs(100) and GaAs(111) A substrates using a metamorphic buffer.

Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates.

Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111) A substrates.

Transmission electron microscopy of AlGaAs/GaAs quantum cascade laser structures.

Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects.

Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures.

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