Item request has been placed!

Item request cannot be made.

Processing Request

نتائج البحث

Display Settings

النتائج لكل صفحة: 10

Sort By: Relevance

Filter

فلترة النتائج

إعادة تعيين خيارات الفبترة

Item request has been placed!

Item request cannot be made.

Processing Request

Academic Journal

Field effect and capacitance of silicon crystals with hopping conductivity over point radiation defects pinning the Fermi level.

Authors : Poklonski, N. A.¹ ; Vyrko, S. A.¹; Zabrodskii, A. G.²

Source: Semiconductors. Nov2007, Vol. 41 Issue 11, p1300-1306. 7p. 1 Diagram, 4 Graphs.

تفاصيل العنوان

اقرأ على الانترنت اقرأ أكثر حفظ في قائمتي

Academic Journal

The model of self-compensation and pinning of the Fermi level in irradiated semiconductors.

Authors : Brudnyĭ, V. N.¹ ; Kolin, N. G.²; Smirnov, L. S.³

Source: Semiconductors. Sep2007, Vol. 41 Issue 9, p1011-1020. 10p. 2 Charts, 5 Graphs.

تفاصيل العنوان

اقرأ على الانترنت اقرأ أكثر حفظ في قائمتي

Academic Journal

Calculation of Fermi level location and point defect ensemble in CdTe single crystal and thin films.

Authors : Kosyak, V. V.¹ ; Opanasyuk, A. S.¹

Source: Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007, Vol. 10 Issue 3, p95-102. 8p. 1 Diagram, 2 Charts, 3 Graphs.

تفاصيل العنوان

اقرأ على الانترنت اقرأ أكثر حفظ في قائمتي

Academic Journal

Quantum point contact due to Fermi-level pinning and doping profiles in semiconductor nanocolumns.

Authors : Indlekofer, K. M.¹ ; Goryll, M.¹; Wensorra, J.¹

Source: Applied Physics A: Materials Science & Processing. Jun2007, Vol. 87 Issue 3, p559-562. 4p. 4 Diagrams, 1 Graph.

تفاصيل العنوان

اقرأ على الانترنت اقرأ أكثر حفظ في قائمتي

Academic Journal

Correlation between energy positions of deep intrinsic point-defect levels and a limiting fermi level in irradiated III–V semiconductors.

Authors : Brudnyi, V. N.¹ ; Grinyaev, S. N.²; Kolin, N. G.

Source: Russian Physics Journal. May2007, Vol. 50 Issue 5, p429-434. 6p.

تفاصيل العنوان

اقرأ على الانترنت اقرأ أكثر حفظ في قائمتي

Academic Journal

Characteristics of the Raman spectra of single-walled carbon nanotube bundles under electrochemical potential control.

Authors : Takeda, Norihiko¹; Murakoshi, Kei^1,2

Source: Analytical & Bioanalytical Chemistry. May2007, Vol. 388 Issue 1, p103-108. 6p. 1 Diagram, 4 Graphs.

تفاصيل العنوان

اقرأ على الانترنت اقرأ أكثر حفظ في قائمتي

Academic Journal

Optical investigation of the electronic structure of alloys ?u-F?

Authors : Vovchenko, V. V.¹; Staschuk, V. S.¹; Poperenko, L. V.¹

Source: Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007, Vol. 10 Issue 3, p58-60. 3p. 4 Graphs.

تفاصيل العنوان

اقرأ على الانترنت اقرأ أكثر حفظ في قائمتي

Academic Journal

Frequency-dependent dielectric coefficients of TlInS2 amorphous films.

Authors : Mustafaeva, S. N.¹ ; Asadov, M. M.²; Qahramanov, K. Sh.³

Source: Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007, Vol. 10 Issue 2, p58-61. 4p.

تفاصيل العنوان

اقرأ على الانترنت اقرأ أكثر حفظ في قائمتي

Academic Journal

Electronic properties of LaNiIn doped with hydrogen.

Authors : WASYLKOWICZ, Ł.¹; JEZIERSKI, A.² ; SZYTUŁA, A.³

Source: Materials Science (0137-1339). 2007, Vol. 25 Issue 4, p1229-1234. 6p.

تفاصيل العنوان

اقرأ على الانترنت اقرأ أكثر حفظ في قائمتي

Academic Journal

Tunable electronic interfaces between bulk semiconductors and ligand-stabilized nanoparticle assemblies.

Authors : Boettcher, Shannon W.¹; Strandwitz, Nicholas C.²; Schierhorn, Martin¹

Source: Nature Materials. Aug2007, Vol. 6 Issue 8, p592-596. 5p. 2 Diagrams, 3 Graphs.

تفاصيل العنوان

اقرأ على الانترنت اقرأ أكثر حفظ في قائمتي

نتائج البحث

فلترة النتائج

Field effect and capacitance of silicon crystals with hopping conductivity over point radiation defects pinning the Fermi level.

The model of self-compensation and pinning of the Fermi level in irradiated semiconductors.

Calculation of Fermi level location and point defect ensemble in CdTe single crystal and thin films.

Quantum point contact due to Fermi-level pinning and doping profiles in semiconductor nanocolumns.

Correlation between energy positions of deep intrinsic point-defect levels and a limiting fermi level in irradiated III–V semiconductors.

Characteristics of the Raman spectra of single-walled carbon nanotube bundles under electrochemical potential control.

Optical investigation of the electronic structure of alloys ?u-F?

Frequency-dependent dielectric coefficients of TlInS2 amorphous films.

Electronic properties of LaNiIn doped with hydrogen.

Tunable electronic interfaces between bulk semiconductors and ligand-stabilized nanoparticle assemblies.

اتصل بنا

اتبع