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The Extended Range of Reaction-layer Fatigue Susceptibility of Polycrystalline Silicon Thin Films.

• Authors : Pierron, O. N.¹; Muhlstein, C. L.¹

• Source: International Journal of Fracture. Sep2005, Vol. 135 Issue 1-4, p1-18. 18p. 2 Diagrams, 11 Graphs.

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Evaluation of trap states at front and back oxide interfaces and grain boundaries using electrical characteristic analysis and device simulation of polycrystalline silicon thin-film transistorsThis paper is recommended by the Silicon Devices and Materials Technology Group Committee.

• Authors : Kimura, Mutsumi¹

• Source: Electronics & Communications in Japan, Part 2: Electronics. Feb2005, Vol. 88 Issue 2, p1-10. 10p.

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Measurements of potential barrier height of grain boundaries in polycrystalline silicon by Kelvin probe force microscopy.

• Authors : Tsurekawa *, S. (AUTHOR); Kido, K. (AUTHOR); Watanabe, T. (AUTHOR)

• Source: Philosophical Magazine Letters. Jan2005, Vol. 85 Issue 1, p41-49. 9p.

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Doping Effect on the Structure of Polycrystalline Silicon Films Grown via Silane Pyrolysis.

• Authors : Kovalevskii, A. A.¹; Borisenko, V. E.¹; Borisevich, V. M.¹

• Source: Inorganic Materials. Dec2005, Vol. 41 Issue 12, p1260-1265. 6p.

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Scattering of Charge Carriers at the Boundaries of Crystallites in Films of Polycrystalline Silicon.

• Authors : Gridchin, V. A.¹; Lyubimski&itlde;, V. M.¹

• Source: Semiconductors. Feb2005, Vol. 39 Issue 2, p192-197. 6p.

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Theoretical analysis and modeling of the obtaining of polycrystalline silicon in a fluidized-bed reactor.

• Authors : Borodulya, V. A.¹; Vinogradov, L. M.¹; Rabinovich, O. S.¹

• Source: Journal of Engineering Physics & Thermophysics. Jan2005, Vol. 78 Issue 1, p47-53. 7p.

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Influence of materials grain structure on the performance of optoelectronic devices.

• Authors : SZYSZKA, ADAM¹ ; PASZKIEWICZ, BOGDAN¹; WOŚKO, MATEUSZ¹

• Source: Optica Applicata. 2005, Vol. 35 Issue 3, p549-554. 6p.

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Semiconductor laser crystallization of a-Si:H on conducting tin-oxide-coated glass for solar cell and display applications.

• Authors : Nayak, B.K.¹; Eaton, B.¹; Selvan, J.A.A.¹

• Source: Applied Physics A: Materials Science & Processing. 2005, Vol. 80 Issue 5, p1077-1080. 4p.

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Reaction between amorphous Si and crystalline Al in Al/Si and Si/Al bilayers: microstructural and thermodynamic analysis of layer exchange.

• Authors : He, D.¹; Wang, J.Y.¹ ; Mittemeijer, E.J.¹

• Source: Applied Physics A: Materials Science & Processing. 2005, Vol. 80 Issue 3, p501-509. 9p.

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regulatory.

• Source: Chemical Week. 8/3/2005, Vol. 167 Issue 25, p37-37. 1/4p.

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