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Academic Journal

Some problems of molecular beam epitaxy growth of epitaxial structures of semiconductor lasers for a 980 nm band.

Authors : KOSMALA, MICHAŁ&¹; REGIŃSKI, KAZIMIERZ¹ ; KOSIEL, KAMIL¹

Source: Optica Applicata. 2005, Vol. 35 Issue 3, p399-405. 7p.

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Academic Journal

Properties and origin of oval defects in epitaxial structures grown by molecular beam epitaxy.

Authors : SZERLING, ANNA¹; KOSIEL, KAMIL¹; WÓJCIK-JEDLIŃSKA, ANNA¹

Source: Optica Applicata. 2005, Vol. 35 Issue 3, p537-548. 12p.

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Academic Journal

The Diffusion Mechanism in the Formation of GaAs and AlGaAs Nanowhiskers during the Process of Molecular-Beam Epitaxy.

Authors : Cirlin, G. E.^1,2 ; Dubrovski&ibreve;, V. G.²

Source: Semiconductors. May2005, Vol. 39 Issue 5, p557-564. 8p.

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Academic Journal

Properties of Silicon Layers Grown by Molecular-Beam Epitaxy.

Authors : Shengurov, V. G.¹; Svetlov, S. P.¹; Chalkov, V. Yu.¹

Source: Inorganic Materials. Nov2005, Vol. 41 Issue 11, p1131-1134. 4p. 3 Graphs.

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Academic Journal

Deep centers in InGaAs/InP layers grown by molecular beam epitaxy.

Authors : KISIEL, MARCIN¹ ; SKROBAS, KAZIMIERZ¹; ZDYB, RYSZARD¹

Source: Optica Applicata. 2005, Vol. 35 Issue 3, p457-463. 7p.

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Academic Journal

Observation of exciton localization in PbSrSe thin films grown by molecular beam epitaxy.

Authors : Shen, W. Z.¹

Source: Applied Physics A: Materials Science & Processing. 2005, Vol. 80 Issue 2, p389-394. 6p.

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Academic Journal

Light-Emitting Si:Er Structures Produced by Molecular-Beam Epitaxy: High-Resolution Photoluminescence Spectroscopy.

Authors : Kryzhkov, D. I.¹; Sobolev, N. A.² ; Andreev, B. A.¹

Source: Semiconductors. Dec2005, Vol. 39 Issue 12, p1399-1402. 4p.

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Academic Journal

Synthesis of aligned GaN nanorods on Si?(111) by molecular beam epitaxy.

Authors : Kim, Y. H.¹; Lee, J. Y.^1,2 ; Lee, S.-H.³

Source: Applied Physics A: Materials Science & Processing. May2005, Vol. 80 Issue 8, p1635-1639. 5p.

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Academic Journal

Photoluminescence properties of p-type InGaAsN grown by RF plasma-assisted molecular beam epitaxy.

Authors : Xie, S. Y.¹; Yoon, S. F.² ; Wang, S. Z.²

Source: Applied Physics A: Materials Science & Processing. Oct2005, Vol. 81 Issue 5, p987-990. 4p.

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Academic Journal

Size and aerial density distributions of Ge nanocrystals in a SiO2 layer produced by molecular beam epitaxy and rapid thermal processing.

Authors : Kanjilal, A.¹; Hansen, J. L.¹; Gaiduk, P.¹

Source: Applied Physics A: Materials Science & Processing. Jul2005, Vol. 81 Issue 2, p363-366. 4p.

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فلترة النتائج

Some problems of molecular beam epitaxy growth of epitaxial structures of semiconductor lasers for a 980 nm band.

Properties and origin of oval defects in epitaxial structures grown by molecular beam epitaxy.

The Diffusion Mechanism in the Formation of GaAs and AlGaAs Nanowhiskers during the Process of Molecular-Beam Epitaxy.

Properties of Silicon Layers Grown by Molecular-Beam Epitaxy.

Deep centers in InGaAs/InP layers grown by molecular beam epitaxy.

Observation of exciton localization in PbSrSe thin films grown by molecular beam epitaxy.

Light-Emitting Si:Er Structures Produced by Molecular-Beam Epitaxy: High-Resolution Photoluminescence Spectroscopy.

Synthesis of aligned GaN nanorods on Si?(111) by molecular beam epitaxy.

Photoluminescence properties of p-type InGaAsN grown by RF plasma-assisted molecular beam epitaxy.

Size and aerial density distributions of Ge nanocrystals in a SiO2 layer produced by molecular beam epitaxy and rapid thermal processing.

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