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Publication : sensors (14248220)

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Academic Journal

N-Channel MOSFET Reliability Issue Induced by Visible/Near-Infrared Photons in Image Sensors †.

Authors : Liu, Chun-Hsien¹ (AUTHOR) ; Lin, Sheng-Di¹ (AUTHOR)

Source: Sensors (14248220). Dec2023, Vol. 23 Issue 23, p9586. 7p.

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Academic Journal

Design of Precision-Aware Subthreshold-Based MOSFET Voltage Reference.

Authors : Mu, Shuzheng¹ (AUTHOR); Chan, Pak Kwong¹ (AUTHOR)

Source: Sensors (14248220). Dec2022, Vol. 22 Issue 23, p9466. 20p.

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Academic Journal

Power MOSFET Linearizer of a High-Voltage Power Amplifier for High-Frequency Pulse-Echo Instrumentation.

Authors : Hojong Choi¹ ; Park Chul Woo¹ ; Jung-Yeol Yeom²

Source: Sensors (14248220). Apr2017, Vol. 17 Issue 4, p764. 12p.

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Academic Journal

Drain Current Modulation of a Single Drain MOSFET by Lorentz Force for Magnetic Sensing Application.

Authors : Chatterjee, Prasenjit¹ ; Hwang-Cherng Chow¹ ; Wu-Shiung Feng¹

Source: Sensors (14248220). Sep2016, Vol. 16 Issue 9, p1389. 11p.

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Academic Journal

A Distance Detector with a Strip Magnetic MOSFET and Readout Circuit.

Authors : Guo-Ming Sung¹ ; Wen-Sheng Lin¹ ; Hsing-Kuang Wang¹

Source: Sensors (14248220). Jan2017, Vol. 17 Issue 1, p126. 15p.

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Academic Journal

IT Pixel Using Floating-Body MOSFET for CMOS Image Sensors.

Authors : Guo-Neng Lu¹ ; Tournier, Arnaud² ; Roy, François² franç

Source: Sensors (14248220). 2009, Vol. 9 Issue 1, p131-147. 17p. 5 Diagrams, 5 Charts, 5 Graphs.

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Academic Journal

Capacitive Measurements of SiO 2 Films of Different Thicknesses Using a MOSFET-Based SPM Probe.

Authors : Lee, Hoontaek¹ (AUTHOR) ; Shin, Kumjae² (AUTHOR) ; Moon, Wonkyu¹ (AUTHOR)

Source: Sensors (14248220). Jun2021, Vol. 21 Issue 12, p4073. 1p.

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Academic Journal

Impact of Channel Thickness and Doping Concentration for Normally-Off Operation in Sn-Doped β -Ga 2 O 3 Phototransistors.

Authors : Yoon, Youngbin¹ (AUTHOR) ; Kim, Yongki¹ (AUTHOR); Shin, Myunghun¹ (AUTHOR)

Source: Sensors (14248220). Sep2024, Vol. 24 Issue 17, p5822. 15p.

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Academic Journal

General Purpose Transistor Characterized as Dosimetry Sensor of Proton Beams.

Authors : Moreno-Pérez, J. A.¹ (AUTHOR) ; Ruiz-García, I.¹ (AUTHOR) ; Martín-Holgado, P.² (AUTHOR)

Source: Sensors (14248220). Apr2023, Vol. 23 Issue 7, p3771. 11p.

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Academic Journal

IGBT Overcurrent Capabilities in Resonant Circuits.

Authors : Al-Hadithi, Basil Mohammed^1,2 (AUTHOR) ; Jimenez, Miguel³ (AUTHOR)

Source: Sensors (14248220). Dec2024, Vol. 24 Issue 23, p7631. 21p.

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فلترة النتائج

N-Channel MOSFET Reliability Issue Induced by Visible/Near-Infrared Photons in Image Sensors †.

Design of Precision-Aware Subthreshold-Based MOSFET Voltage Reference.

Power MOSFET Linearizer of a High-Voltage Power Amplifier for High-Frequency Pulse-Echo Instrumentation.

Drain Current Modulation of a Single Drain MOSFET by Lorentz Force for Magnetic Sensing Application.

A Distance Detector with a Strip Magnetic MOSFET and Readout Circuit.

IT Pixel Using Floating-Body MOSFET for CMOS Image Sensors.

Capacitive Measurements of SiO 2 Films of Different Thicknesses Using a MOSFET-Based SPM Probe.

Impact of Channel Thickness and Doping Concentration for Normally-Off Operation in Sn-Doped β -Ga 2 O 3 Phototransistors.

General Purpose Transistor Characterized as Dosimetry Sensor of Proton Beams.

IGBT Overcurrent Capabilities in Resonant Circuits.

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