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Publication : international journal of numerical modelling

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Academic Journal

GaSb/GaAs Type‐II heterojunction GAA‐TFET with core source for enhanced analog/RF performance and reliability.

Authors : Karthik, Kadava R. N.¹ (AUTHOR); Pandey, Chandan Kumar¹ (AUTHOR)

Source: International Journal of Numerical Modelling. Mar2024, Vol. 37 Issue 2, p1-16. 16p.

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Academic Journal

Study of scaling effect of ferroelectric gate stack in planar InGaAs MOSFET.

Authors : Maity, Subir Kumar¹ (AUTHOR) ; Basak, Arindam¹ (AUTHOR); Das, Himadri Sekhar² (AUTHOR)

Source: International Journal of Numerical Modelling. Mar2023, Vol. 36 Issue 2, p1-12. 12p.

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Academic Journal

Pseudo Split Gate In0.53Ga0.47As/InP Hetero‐Junction Tunnel FET: Design and Analysis.

Authors : Haris, Mohd¹ (AUTHOR); Loan, Sajad A.¹ (AUTHOR) ; Mainuddin¹ (AUTHOR)

Source: International Journal of Numerical Modelling. Mar/Apr2021, Vol. 34 Issue 2, p1-11. 11p.

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Academic Journal

RF modeling of 40-nm SOI triple-gate FinFET.

Authors : Martinez‐Lopez, A. G.¹; Cerdeira, A.²; Tinoco, J. C.³

Source: International Journal of Numerical Modelling. Jul/Aug2015, Vol. 28 Issue 4, p465-478. 14p.

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Academic Journal

Effect of gate-length downscaling on the analog/RF and linearity performance of InAs-based nanowire tunnel FET.

Authors : Baral, Biswajit¹; Biswal, Sudhansu Mohan¹; De, Debashis²

Source: International Journal of Numerical Modelling. May-Aug2017, Vol. 30 Issue 3/4, pn/a-N.PAG. 10p.

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Academic Journal

Study on single‐mode transmission in non‐radiative dielectric waveguide.

Authors : Kazama, Keisuke¹ (AUTHOR); Patwary, Md. Iquebal Hossain¹ (AUTHOR); Iguchi, Akito¹ (AUTHOR)

Source: International Journal of Numerical Modelling. Mar2024, Vol. 37 Issue 2, p1-11. 11p.

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Academic Journal

Design and simulation of a germanium source dual‐metal dopingless tunnel FET as a label‐free biosensor.

Authors : Dash, Sidhartha¹ (AUTHOR) ; Panda, Shwetapadma¹ (AUTHOR)

Source: International Journal of Numerical Modelling. Mar2024, Vol. 37 Issue 2, p1-15. 15p.

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Academic Journal

Heterostructure performance evaluation: A numerical simulation and analytical modeling of the ferroelectric pocket doped double gate tunnel FET.

Authors : Jeyanthi, J. E.¹ (AUTHOR); Samuel, T. S. Arun¹ (AUTHOR) ; Song, Young Suh² (AUTHOR)

Source: International Journal of Numerical Modelling. Mar2024, Vol. 37 Issue 2, p1-14. 14p.

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Academic Journal

Design and simulation of T‐gate AlN/β‐Ga2O3 HEMT for DC, RF and high‐power nanoelectronics switching applications.

Authors : Singh, Rajan¹ (AUTHOR); Rao, G. Purnachandra² (AUTHOR); Lenka, Trupti Ranjan² (AUTHOR)

Source: International Journal of Numerical Modelling. Jan2024, Vol. 37 Issue 1, p1-12. 12p.

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Academic Journal

Analytical analysis and linearity performance of dual metal high‐K Schottky nanowire FET(DM‐HK‐SNWFET).

Authors : Sharma, Swati¹ (AUTHOR) ; Nath, Vandana¹ (AUTHOR); Deswal, S. S.² (AUTHOR)

Source: International Journal of Numerical Modelling. Jan2024, Vol. 37 Issue 1, p1-27. 27p.

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نتائج البحث

فلترة النتائج

GaSb/GaAs Type‐II heterojunction GAA‐TFET with core source for enhanced analog/RF performance and reliability.

Study of scaling effect of ferroelectric gate stack in planar InGaAs MOSFET.

Pseudo Split Gate In0.53Ga0.47As/InP Hetero‐Junction Tunnel FET: Design and Analysis.

RF modeling of 40-nm SOI triple-gate FinFET.

Effect of gate-length downscaling on the analog/RF and linearity performance of InAs-based nanowire tunnel FET.

Study on single‐mode transmission in non‐radiative dielectric waveguide.

Design and simulation of a germanium source dual‐metal dopingless tunnel FET as a label‐free biosensor.

Heterostructure performance evaluation: A numerical simulation and analytical modeling of the ferroelectric pocket doped double gate tunnel FET.

Design and simulation of T‐gate AlN/β‐Ga2O3 HEMT for DC, RF and high‐power nanoelectronics switching applications.

Analytical analysis and linearity performance of dual metal high‐K Schottky nanowire FET(DM‐HK‐SNWFET).

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