نتائج البحث

Using Machine Learning and Finite Element Analysis to Extract Traction-Separation Relations at Bonding Wire Interfaces of Insulated Gate Bipolar Transistor Modules.

• Authors : Zhao S; Institute of Electronics Packaging Technology and Reliability, School of Mathematics, Statistics and Mechanics, Beijing University of Technology, Beijing 100124, China.; Beijing Key Laboratory of Advanced Manufacturing Technology, Beijing University of Technology, Beijing 100124, China.

• Source: Materials (Basel, Switzerland) [Materials (Basel)] 2024 Feb 22; Vol. 17 (5). Date of Electronic Publication: 2024 Feb 22.Publisher: MDPI Country of Publication: Switzerland NLM ID: 101555929 Publication Model: Electronic Cited Medium: Print ISSN: 1996-1944 (Print)

تفاصيل العنوان

Digital-Twin-Driven Intelligent Insulated-Gate Bipolar Transistor Production Lines.

• Authors : Zhang X; The Institute of Technological Sciences, Wuhan University, Wuhan 430070, China.; Liu X

• Source: Sensors (Basel, Switzerland) [Sensors (Basel)] 2024 Jan 18; Vol. 24 (2). Date of Electronic Publication: 2024 Jan 18.Publisher: MDPI Country of Publication: Switzerland NLM ID: 101204366 Publication Model: Electronic Cited Medium: Internet ISSN: 1424-8220

تفاصيل العنوان

High-Energy Radiation Effects on Silicon NPN Bipolar Transistor Electrical Performance: A Study with 1 MeV Proton Irradiation.

• Authors : El Ghazi H; 2SMPI Group, ENSAM Laboratory, Hassan II University, Nile 150, Casablanca 20670, Morocco.; LPS, Faculty of Sciences, Mohamed Ben Abdellah University, Fes 30000, Morocco.

• Source: Materials (Basel, Switzerland) [Materials (Basel)] 2023 Oct 31; Vol. 16 (21). Date of Electronic Publication: 2023 Oct 31.Publisher: MDPI Country of Publication: Switzerland NLM ID: 101555929 Publication Model: Electronic Cited Medium: Print ISSN: 1996-1944 (Print)

تفاصيل العنوان

The Minimum AC Signal Model of Bipolar Transistor in Amplification Region for Weak Signal Detection.

• Authors : Huang L; Ocean College, Zhejiang University, Hangzhou 310058, China.; Miao Q

Subjects: Microelectrodes* ; Signal Processing, Computer-Assisted*; Computer Simulation

• Source: Sensors (Basel, Switzerland) [Sensors (Basel)] 2021 Oct 26; Vol. 21 (21). Date of Electronic Publication: 2021 Oct 26.Publisher: MDPI Country of Publication: Switzerland NLM ID: 101204366 Publication Model: Electronic Cited Medium: Internet ISSN: 1424-8220

تفاصيل العنوان

Evidence of Strange Attractors in Class C Amplifier with Single Bipolar Transistor: Polynomial and Piecewise-Linear Case.

• Authors : Petrzela J; Department of Radio Electronics, Faculty of Electrical Engineering and Communication, Brno University of Technology, Technicka 12, 616 00 Brno, Czech Republic.

• Source: Entropy (Basel, Switzerland) [Entropy (Basel)] 2021 Jan 30; Vol. 23 (2). Date of Electronic Publication: 2021 Jan 30.Publisher: MDPI Country of Publication: Switzerland NLM ID: 101243874 Publication Model: Electronic Cited Medium: Internet ISSN: 1099-4300

تفاصيل العنوان

Integrated Rogowski Coil Sensor for Press-Pack Insulated Gate Bipolar Transistor Chips.

• Authors : Jiao C; School of Electrical Engineering, Beijing Jiaotong University, No.3 ShangYuanCun, Haidian District, Beijing 100044, China.; Zhang Z

• Source: Sensors (Basel, Switzerland) [Sensors (Basel)] 2020 Jul 22; Vol. 20 (15). Date of Electronic Publication: 2020 Jul 22.Publisher: MDPI Country of Publication: Switzerland NLM ID: 101204366 Publication Model: Electronic Cited Medium: Internet ISSN: 1424-8220

تفاصيل العنوان

Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures.

• Authors : Curry MJ; Department of Physics and Astronomy, University of New Mexico, Albuquerque, New Mexico, 87131, USA. .; Center for Quantum Information and Control, University of New Mexico, Albuquerque, New Mexico, 87131, USA. .

• Source: Scientific reports [Sci Rep] 2019 Nov 18; Vol. 9 (1), pp. 16976. Date of Electronic Publication: 2019 Nov 18.Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN:

تفاصيل العنوان

Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits.

• Authors : Sarker MAR; School of Electrical and Computer Engineering, Oklahoma State University, Stillwater, OK 74078, USA.; Jung S

• Source: Sensors (Basel, Switzerland) [Sensors (Basel)] 2020 May 01; Vol. 20 (9). Date of Electronic Publication: 2020 May 01.Publisher: MDPI Country of Publication: Switzerland NLM ID: 101204366 Publication Model: Electronic Cited Medium: Internet ISSN: 1424-8220

تفاصيل العنوان

Hybrid multimodule DC-DC converters accelerated by wide bandgap devices for electric vehicle systems.

• Authors : Waheed A; Department of Electrical Engineering, The Superior University, Lahore, 54000, Pakistan.; Rehman SU

• Source: Scientific reports [Sci Rep] 2024 Feb 27; Vol. 14 (1), pp. 4746. Date of Electronic Publication: 2024 Feb 27.Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN:

تفاصيل العنوان

Study of the Solder Characteristics of IGBT Modules Based on Thermal-Mechanical Coupling Simulation.

• Authors : Chen J; School of Mechanical Engineering, Wuhan Polytechnic University, Wuhan 430000, China.; Liu B

• Source: Materials (Basel, Switzerland) [Materials (Basel)] 2023 May 02; Vol. 16 (9). Date of Electronic Publication: 2023 May 02.Publisher: MDPI Country of Publication: Switzerland NLM ID: 101555929 Publication Model: Electronic Cited Medium: Print ISSN: 1996-1944 (Print)

تفاصيل العنوان